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反应烧结MoSi2-SiC复相材料电阻率的拓扑研究
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TG146.4


The Topological Analysis of the Composite MoSi2-SiC
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    摘要:

    用拓扑法计算了不同显微组织的MoSi2-SiC材料的电阻率,得到的理论推算结果与实验值吻合很好。研究结果表明,提高高电阻率SiC的体积分数和降低MoSi2-SiC分布的连续性,可提高MoSi2-SiC材料整体的电阻率。该方法可用来预测要得到所需电阻率材料中应具有的SiC含量和分布形态,为确定MoSi2-SiC复相材料的显微结构设计提供指导。

    Abstract:

    The electrical resistivity of the composite MoSi2 SiC containing various SiC contents was calculated by a topological method. The results of theory and experiment were found to be in good agreement. The researching results indicate that the electrical resisitivity of the bulk composite can be increased by increasing the volume fractions of the higher resistivity SiC phase and reducing continuity of the MoSi2. The approach described may predict the SiC volume fractions and microstructures needed to obtain some desired electrical resistivity, and may provide insights into the final microstructure.

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张小立 吕振林 金志浩.反应烧结MoSi2-SiC复相材料电阻率的拓扑研究[J].稀有金属材料与工程,2003,(8):604~606.[Zhang Xiaoli, Lu Zhenlin, Jin Zhihao. The Topological Analysis of the Composite MoSi2-SiC[J]. Rare Metal Materials and Engineering,2003,(8):604~606.]
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  • 最后修改日期:2002-11-18