Plating Cu on TiNi/Ti/SiO2/Si substrate in the HF+CuSO4 solution by separated electrodes chemical method was discussed in this essay. Si and TiNi/Ti/SiO2/Si are used as the anode and cathode. The best condition for the plating is as followings: distance for the electrodes is 0.5 mm, [HF] and [CuSO4] more than 8 wt% and 0.045 mol/L. Finally uniform deposited Cu film with complete coverage, few voids and preference of <111> is obtained. Also deposited Cu film does not contain Cu2O, which reduces the resistivity.