Development of microelectromechanical system (MEMS) requires permanent magnetic films prepared on Si substrates with good thermal stability. The SmCo-based films were deposited on Si (100) substrates by magnetron sputtering process, and the effect of sputtering parameters on deposition rate, microstructure, crystal structure, and magnetic properties were investigated subsequently. The results show that the TbCu7-type structural SmCo-based film is obtained with adjusted sputtering parameters. The film exhibits a well preferred crystal orientation and fine microstructure, leading to better in-plane magnetic properties and a magnetization reversal process mainly controlled by domain wall pinning mechanism.