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VO2/FTO复合薄膜的制备及其光电特性研究
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上海理工大学,上海理工大学

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TB43

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国家高技术研究发展计划(863计划)


Preparation and optical-electrical properties of VO2/FTO composite films
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university of Shanghai for science and technology,University of Shanghai for Science and Technology

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    摘要:

    采用直流磁控溅射法在掺氟的SnO2(FTO)导电玻璃衬底上沉积纯钒金属薄膜,再在常压氮氧混合气氛中退火制备VO2/FTO复合热致变色薄膜,并对复合薄膜的结构、光学特性以及电学特性进行了测试分析。结果表明,薄膜结晶程度较高, 表面平滑致密, 具有很好的一致性,导电玻璃上的FTO并没有改变VO2择优取向生长,但明显改变了VO2薄膜的表面形貌特征。与VO2薄膜的典型相变温度68℃相比,VO2/FTO复合薄膜的相变温度降低约20℃,热滞回线收窄到5℃,相变前后的红外透过率分别为45%和22%,相变前后电阻率的变化达3个数量级,VO2/FTO复合薄膜优良的光电特性对新型光电薄膜器件的设计开发和应用具有重要意义。

    Abstract:

    The pure vanadium metal thin films were fabricated on the SnO2 doped F conductive glass(FTO) substrates by DC magnetron sputtering at room temperature, then the VO2 /FTO composite films were prepared by annealing process in a mixture of N2 and O2. The structure and optical-electrical properties of the composite films were analyzed by instruments. AFM results show that the crystallinity of the thin film is improved significantly with smooth and uniform surface morphology. Results show that VO2 /FTO composite films do not change the preferred orientation growth of VO2 thin films, but significantly change its surface morphology characteristics. Compared with the VO2 thin films that the phase transition temperature of the VO2 /FTO composite films is decreased about 20℃, the width of thermal hysteresis is narrowed by about 5℃, and the infrared transmittances before and after phase transition are 45% and 22% respectively. The resistivity variation is up to three orders of magnitude before and after transition. This brings about many new opportunities for optoelectronic devices and industrial production.

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郑鸿柱,李毅. VO2/FTO复合薄膜的制备及其光电特性研究[J].稀有金属材料与工程,2016,45(6):1593~1599.[zhenghongzhu, LiYi. Preparation and optical-electrical properties of VO2/FTO composite films[J]. Rare Metal Materials and Engineering,2016,45(6):1593~1599.]
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  • 收稿日期:2014-05-20
  • 最后修改日期:2014-06-19
  • 录用日期:2014-07-28
  • 在线发布日期: 2016-10-08
  • 出版日期: