+高级检索
基于数值模拟的太阳能直拉硅单晶热场降耗研究
DOI:
作者:
作者单位:

上海大学,上海大学,上海大学,上海大学

作者简介:

通讯作者:

中图分类号:

基金项目:


The Study of Power Consumption on CzochralskiSilicon Single Crystal Growth Process for Photovoltaic through Numerical Simulat
Author:
Affiliation:

Shanghai University,Shanghai University,Shanghai University,Shanghai University

Fund Project:

  • 摘要
  • |
  • 图/表
  • |
  • 访问统计
  • |
  • 参考文献
  • |
  • 相似文献
  • |
  • 引证文献
  • |
  • 资源附件
  • |
  • 文章评论
    摘要:

    通过计算机数值模拟仿真技术分析了TDR-95A-ZJS型22英寸太阳能直拉硅单晶热场结构中影响能耗的主要因素。基于模拟结果提出了通过改变部分热场结构及保温毡布局等优化措施可有效降低原有热场功耗。实际生产实验表明,优化后的热场在保证晶体生长原有质量前提下较原有热场节能29%。

    Abstract:

    Factors influencing the heater power consumption on 22inch hotzone in TDR-95A-ZJS Czochrolaski crystal growth furnace for photovoltaic application are analyzed by means of numerical modeling and simulations. Based on numerical simulation results, hotzone optimization through structure and graphite insulator layout modifications targeted for heater power reduction is proposed. Physical crystal growthexperiments show that the heater power consumption is reduced by 29% after hotzone optimization while the crystal quality remains very similar to the ones obtained by original hotzone.

    参考文献
    相似文献
    引证文献
引用本文

邓先亮,任忠鸣,邓康,吴亮.基于数值模拟的太阳能直拉硅单晶热场降耗研究[J].稀有金属材料与工程,2016,45(11):2907~2911.[dengxianliang, Ren Zhongming, Deng Kang, Wu Liang. The Study of Power Consumption on CzochralskiSilicon Single Crystal Growth Process for Photovoltaic through Numerical Simulat[J]. Rare Metal Materials and Engineering,2016,45(11):2907~2911.]
DOI:[doi]

复制
文章指标
  • 点击次数:
  • 下载次数:
  • HTML阅读次数:
  • 引用次数:
历史
  • 收稿日期:2014-08-03
  • 最后修改日期:2014-08-29
  • 录用日期:2014-09-28
  • 在线发布日期: 2016-12-08
  • 出版日期: