Anatase TiO₂ thin films were grown on quartz substrates by RF magnetron sputtering. Metal-semiconductor-metal (MSM) detectors with Ag IDT electrodes were then fabricated. The measurement of the I-V characteristics for the detectors shows good ohmic contact. It was found that the thickness of TiO₂ layer had an obvious effect on the photoelectronic properties. When TiO₂ film thickness is 197 nm, the photocurrent is nearly 2.5 orders of magnitude higher than the dark current and the photoresponse in ultraviolet region is nearly 2 orders of magnitude higher than in visible light region. The high sensitivity and visible blind properties of the obtained devices indicate their potential application as UV detectors with high efficiency and low cost.