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Mg掺杂InxGa1-xN薄膜的磁控溅射法制备和表征
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西北大学信息科学与技术学院

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国家自然科学基金项目(面上项目,重点项目,重大项目)


Preparation and characterization of Mg doped InxGa1-xN thin films by magnetron sputtering
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Northwest University

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基金号No. 61405159

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    摘要:

    本文采用磁控溅射法用In2O3靶、Ga2O3靶、Mg靶在Si片上制备出InxGa1-xN薄膜和Mg掺杂的InxGa1-xN薄膜。薄膜中的In组分随着Mg的掺杂而减少,因为Mg的掺杂抑制了In-N键的形成,并增加了Ga进入薄膜的机会。通过EDS对Mg掺杂的InxGa1-xN薄膜的分析表明,有1.4%的Mg组分被成功地注入进InxGa1-xN薄膜。电学性能分析表明 In0.84Ga0.16N 和Mg掺杂的 In0.1Ga0.9N薄膜导电类型由n型转变为p型,而且Mg掺杂的 In0.1Ga0.9N薄膜的空穴浓度和电子迁移率分别为 2.65×1018 cm?3 和3.9 cm2/Vs。

    Abstract:

    Being considered In2O3, Ga2O3, Mg as In, Ga and Mg sources, the InxGa1-xN and Mg doped InxGa1-xN thin films were deposited on Si substrate by magnetron sputtering. The In component in the film decreases with the doping of Mg, because Mg doped suppresses the formation of In-N bond and increases the chance of Ga into the film. The EDS analysis of Mg doped InxGa1-xN film as-prepared show that 1.4 % of Mg content was successfully doped into the InxGa1-xN film. The electrical performances of In0.84Ga0.16N and Mg doped In0.1Ga0.9N thin films reveal that the type conduction of InxGa1-xN thin films is transformed from n-type to p-type conduction, and the hole concentration and mobility of Mg doped In0.1Ga0.9N thin film are found to be 2.65×1018 cm?3 and 3.9 cm2/Vs, respectively.

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王雪文,吴朝科,高海波,翟春雪,张志勇,贺琳. Mg掺杂InxGa1-xN薄膜的磁控溅射法制备和表征[J].稀有金属材料与工程,2019,48(4):1074~1078.[wangxuewen, wuzhaoke, gaohaibo, zhaichunxue,张志勇,helin. Preparation and characterization of Mg doped InxGa1-xN thin films by magnetron sputtering[J]. Rare Metal Materials and Engineering,2019,48(4):1074~1078.]
DOI:10.12442/j. issn.1002-185X.20171015

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  • 收稿日期:2017-11-09
  • 最后修改日期:2017-12-29
  • 录用日期:2018-03-12
  • 在线发布日期: 2019-05-13
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