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MgB2/Mo多层膜的制备与超导性质的研究
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作者单位:

1.贵阳学院电子与通信学院 贵州 贵阳 中国科学院微电子研究所 北京;2.贵州民族大学化学工程学院;3.贵州省微纳电子与软件技术重点实验室 贵州 贵阳;4.中科院微电子研究所;5.贵州民族大学

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TN405

基金项目:

国家自然科学基金(11564005);贵州省科技厅联合基金(黔科合LH字[2015]7300号);贵州省教育厅创新团队重大研究项目(黔教合KY字[2017]035);贵州省教育厅重点支持学科项目(黔学位合字ZDXK[2016]21号);贵州省教育厅高校科技创新团队(黔教合人才团队字[2013]18号)


The Fabrication and Superconducting Property of MgB2/Mo Multilayer Films
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Affiliation:

1.School of Electronic Communication Engineering,Guiyang University;2.Key Laboratory of Micro Nano Technology of Guizhou Province

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    摘要:

    本文采用磁控溅射技术(MS)和混合物理化学气相沉积法(HPCVD)在单晶Al2O3基底上制备MgB2/Mo多层膜。通过扫描电子显微镜(SEM)、X射线衍射(XRD)和标准四线法对样品的表面形貌、晶体结构和超导特性进行了测量研究。实验结果表明随着后续MgB2沉积温度的增加各膜层结晶程度进一步提高,晶粒尺寸不断增大,各自保持着良好的物质稳定性。在730℃温度下生长的MgB2薄膜的超导转变温度Tcon和零电阻温度Tc0分别为39.73K~39.53K,剩余电阻率~0.77μΩcm,表明样品处于干净极限。

    Abstract:

    The MgB2/Mo multilayer films were fabricated, which the MgB2 layers were grown by using the hybrid physics-chemistry vapor deposited (HPCVD), the Mo films were prepared with Magnetron sputtering (MS) technology. Scanning electron microscopy, X-ray diffraction, and four-point probe method were carried out to study surface morphology, superconducting properties and crystal structure of MgB2/Mo multilayer. The results addressed the multilayer can maintain good stability which the crystallization degree is further improved and the grain size is increases with the subsequent deposition temperature of MgB2 films. Excellent properties are obtained in the upper MgB2 layer prepared at 730℃, including the superconducting transition temperature(Tcon) and zero resistance temperature(Tc0) for 39.73K~39.53K,the remaining resistivity down to about 0.77μΩcm, which indicates that films are in the clean limit.

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周章渝,肖寒,王松,张青竹,王代强,陈雨青,傅兴华. MgB2/Mo多层膜的制备与超导性质的研究[J].稀有金属材料与工程,2019,48(8):2711~2715.[Zhou Zhang yu, Xiao Han, Wang Song, Zhang Qing Zhu, Wang Dai Qiang, Chen Yu Qing, Fu Xing hua. The Fabrication and Superconducting Property of MgB2/Mo Multilayer Films[J]. Rare Metal Materials and Engineering,2019,48(8):2711~2715.]
DOI:10.12442/j. issn.1002-185X.20180254

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  • 收稿日期:2018-03-19
  • 最后修改日期:2018-03-28
  • 录用日期:2018-06-19
  • 在线发布日期: 2019-09-05
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