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PVT同质外延生长AlN单晶初期模拟及其实验研究
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作者单位:

上海大学

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中图分类号:

TN304.1

基金项目:

国家自然科学基金(U1560202,51401116);上海市科委基金(13DZ1108200,13521101102)


Numerical Simulation and Experimental Research on AlN Crystal Initial Growth by Homoepitaxial PVT Method
Author:
Affiliation:

Shanghai University

Fund Project:

The National Natural Science Foundation of China (General Program, Key Program, Major Research Plan)

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    摘要:

    在同质外延生长大尺寸、高质量氮化铝单晶的初期,常用梯度反转工艺避免氧、碳及氢等杂质污染籽晶表面。本文使用FEMAG晶体生长模拟仿真软件及自主开发的PVT法有限元多相流传质模块对自主设计的全自动、双电阻加热气相沉积炉进行了同质外延生长AlN单晶初期温度场及传质过程模拟仿真研究,并基于模拟结果开展了同质外延长晶实验。模拟仿真及实验研究结果表明:通过生长初期的梯度反转工艺可有效消除氧、碳及氢等杂质表面污染;坩埚的合理位置对同质外延生长AlN单晶时的温度梯度、Al/N蒸气传输及生长速率等至关重要;基于AlN单晶同质外延生长初期的模拟仿真研究与成功生长实验,为下一步开展稳定同质外延扩尺寸单晶生长工艺奠定了扎实基础。

    Abstract:

    An inverse temperature gradient is generally adopted in order to avoid second nucleation at the initial homoepitaxial growth due to O, C and H impurities. In this paper, we investigated the temperature distribution and mass transfer at the initial homoepitaxial AlN growth stage in a proprietary and fully automatic physical vapor transport sublimation reactor by FEMAG and an in-house finite element multi-phase mass transfer code, respectively. Homoepitaxial growth experiment was also conducted successfully based on numerical simulation results. The simulation and experiment results showed the deposition of O, C and H impurities at the initial homoepitaxial growth stage could be efficient avoided by an inverse temperature distribution. The crucible position played a key role on the temperature distribution and mass transfer during the subsequent AlN crystal growth stage. The numerical simulation results and successful homoepitaxial growth experiment placed a solid foundation for our future size enlargement growth experiments.

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黄嘉丽,王琦琨,贺广东,雷丹,付丹扬,龚建超,任忠鸣,邓康,吴亮. PVT同质外延生长AlN单晶初期模拟及其实验研究[J].稀有金属材料与工程,2019,48(10):3209~3214.[Huang Jiali, Wang Qikun, He Guangdong, Lei Dan, Fu Danyang, Gong Jianchao, Ren Zhongming, Deng Kang, Wu Liang. Numerical Simulation and Experimental Research on AlN Crystal Initial Growth by Homoepitaxial PVT Method[J]. Rare Metal Materials and Engineering,2019,48(10):3209~3214.]
DOI:10.12442/j. issn.1002-185X.20180634

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历史
  • 收稿日期:2018-06-19
  • 最后修改日期:2018-08-16
  • 录用日期:2018-08-31
  • 在线发布日期: 2019-11-01
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