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原子层沉积Al2O3 保护层氢终端金刚石MISFETs的电学特性
作者:
作者单位:

1.内蒙古工业大学 材料科学与工程学院，内蒙古 呼和浩特 010051;2.西安交通大学 宽禁带半导体材料与器件研究中心，陕西 西安 710000;3.内蒙古自治区薄膜与涂层重点实验室，内蒙古 呼和浩特 010051

基金项目:

国家自然科学基金项目（面上项目，重点项目，重大项目）


Electrical Characteristics of MISFETs with Al2O3 Atomic Layer Deposited as Hydrogen-Terminated Diamond Protec-tive Layer
Author:
Affiliation:

1.College of Materials Science and Engineering, Inner Mongolia University of Technology, Hohhot 010051, China;2.Institute of Wide Band Gap Semiconductors, Xi'an Jiaotong University, Xi'an 710049, China;3.Inner Mongolia Key Laboratory of Thin Film and Coatings, Hohhot 010051, China

Fund Project:

National Natural Science Foundation of China (51964035); Natural Science Foundation of Inner Mongolia Autonomous Region (2019MS0520); Natural Science Foundation of Inner Mongolia Autonomous Region (2020LH05017)

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    摘要:

    研究了Zr-Si-N氢终端金刚石（H-diamond）绝缘栅场效应晶体管（MISFET）在有无Al2O3保护层情况下的电学特性。分别采用原子层沉积法（ALD）和射频溅射法（RF）制备了Al2O3保护层和Zr-Si-N栅介质层。MISFETs的转移特性曲线表明，其栅阈值电压在有无Al2O3保护的情况下从-2.5 V变化到3 V，表明器件从常关型转换为常开型。输出和转移特性曲线揭示了氧化铝的存在保护了氢终端，使其免受磁控溅射过程的损伤。

    Abstract:

    The interface properties of Zr-Si-N/hydrogen-terminated diamond (H-diamond) metal insulator semiconductor field transistors (MISFETs) with and without Al2O3 protective layer were studied. The Al2O3 protection layer and Zr-Si-N insulation layer were deposited by atomic layer deposition (ALD) and radio frequency (RF) sputter methods, respectively. The transfer characteristics of the MISFETs show that the gate threshold voltage varies from -2.5 V to 3 V with and without Al2O3 layer, which indicates that the devices switch from normally off to normally on operation. The output and transfer properties reveal the preservation of hydrogen termination because of the Al2O3 layer.

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张鹏飞,陈伟东,张少鹏,闫淑芳,马文,王宏兴.原子层沉积Al2O3 保护层氢终端金刚石MISFETs的电学特性[J].稀有金属材料与工程,2021,50(6):1946~1949.[Zhang Pengfei, Chen Weidong, Zhang Shaopeng, Yan Shufang, Ma Wen, Wang Hongxing. Electrical Characteristics of MISFETs with Al2O3 Atomic Layer Deposited as Hydrogen-Terminated Diamond Protec-tive Layer[J]. Rare Metal Materials and Engineering,2021,50(6):1946~1949.]
DOI：10.12442/j. issn.1002-185X.20200348

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  • 收稿日期:2020-05-21
  • 最后修改日期:2020-08-20
  • 录用日期:2020-08-28
  • 在线发布日期: 2021-07-07
  • 出版日期: 2021-06-30

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