Based on electron backscattered diffraction (EBSD) and grain growth model of thin film materials, grain sizes and growth thermo-kinetics were investigated during annealing with different heating rates in high-voltage anode aluminum foil. Results show that the grain growth exponent n=4, activation energy Q_g=129 kJ/mol and rate constant K=1.28×10^-8 m⁴·s^-1 are calculated by the typical isothermal grain growth equation. Based on grain growth model of thin film materials and energy anisotropy, the reasons for the rapid growth of (001) oriented grains are well explained, and a typical 40°<111> misorientation relationship with S-grains is found.