+高级检索
Bi2Sn2O7含量对改性Ag/SnO2电接触复合材料性能的影响研究
作者:
作者单位:

1.浙江大学温州研究院;2.温州宏丰电工合金有限公司

作者简介:

通讯作者:

中图分类号:

TG 501.3

基金项目:

浙江省重点研发计划项目资助(项目号 2017C01051);浙江省自然科学(项目号 LQ20E020008);中央高校基本科研业务费专项资金资助(项目号K20200042)


Effect of Bi2Sn2O7 content on microstructure and properties of Modified Ag/SnO2 Electrical Contact materials
Author:
Affiliation:

1.Wenzhou Research Institute of Zhejiang University,Wenzhou;2.Wenzhou Hongfeng Electrical Alloy Co., Ltd.

Fund Project:

The key R & D program of Zhejiang Province (Project No. 2017c01051); Zhejiang Natural Science Foundation Project (Project No.: lq20e02008);Special fund for basic scientific research business expenses of Central Universities (Project No.: k20200042)

  • 摘要
  • |
  • 图/表
  • |
  • 访问统计
  • |
  • 参考文献
  • |
  • 相似文献
  • |
  • 引证文献
  • |
  • 资源附件
  • |
  • 文章评论
    摘要:

    以SnO2、Bi2Sn2O7为增强相粉体,化学银粉为基体相,采用高能球磨辅助常压烧结工艺制备出系列Bi2Sn2O7改性SnO2增强银基复合材料。考察了Bi2Sn2O7含量、球磨时间、烧结制度对Ag/SnO2-Bi2Sn2O7复合材料物理性能的影响规律。结果表明:随着球磨时间从1h延长至12h,Ag/SnO2-(6 wt.%) Bi2Sn2O7复合粉体从颗粒态向片状结构发生转变,Ag/SnO2-(6 wt.%) Bi2Sn2O7复合材料的电阻率呈逐渐上升趋势而密度呈不断下降趋势。烧结温度的提升和Bi2Sn2O7掺杂量的增加均有助于降低Ag/SnO2-Bi2Sn2O7复合材料的电阻率,且当Bi2Sn2O7掺杂量为12 wt.%、烧结温度900℃时,样品Ag/ (12 wt.%) Bi2Sn2O7的电阻率达到最佳值2.24 μΩ·cm。循环50次的初期电弧烧蚀试验分析可知,相比于纯Ag/SnO2而言,Bi2Sn2O7改性样品表面的烧损面积并未快速扩展至整个表面,且当Bi2Sn2O7含量为6 wt%时,Ag/SnO2-(6 wt.%) Bi2Sn2O7样品表面的烧损面积最小。而当Bi2Sn2O7含量为12 wt.%时, Ag/ (12 wt.%) Bi2Sn2O7表面烧蚀区出现了飞溅现象,这可能归因于其较低的表面硬度(82.38HV0.3)。

    Abstract:

    With as-prepared SnO2 and Bi2Sn2O7 as reinforcing phase powder and chemical silver powder as matrix phase, series of Bi2Sn2O7 modified Ag/SnO2 electrical contacts were prepared by high energy ball milling assisted sintering process. The effects of Bi2Sn2O7 content, milling time and sintering parameters on the microstructure and physical properties of Ag/SnO2-Bi2Sn2O7 electrical contacts were investigated. The results show that with milling time ranged from 1h up to 12h, the morphologies of Ag/SnO2-(6 wt.%) Bi2Sn2O7 composite powder changed from granular to flake structure. The resistivity of Ag/SnO2-(6 wt.%) Bi2Sn2O7 electrical contact increased gradually but the density decreased. The increase of sintering temperature and the increase of Bi2Sn2O7 doping content could benifit for reducing the resistivity of Ag/SnO2-Bi2Sn2O7 contacts. With the Bi2Sn2O7 doping content of 12 wt.% and the sintering temperature at 900℃, the resistivity of Ag /(12 wt.%) Bi2Sn2O7 reaches the optimal value of 2.24 μ Ω·cm. According to the initial arc ablation testing after 50 cycles, compared with pure Ag/SnO2, the ablation area of the modified Ag/SnO2-Bi2Sn2O7 samples did not rapidly expand to the whole surface, and when the Bi2Sn2O7 content was 6 wt.%, the ablation area of Ag/SnO2-(6 wt.%) Bi2Sn2O7 sample is the smallest. While, with the Bi2Sn2O7 content of 12 wt.%, the Ag /(12 wt.%) Bi2Sn2O7 sample appeared obvious splash phenomenon, which may be due to its lower hardness of 82.38HV0.3.

    参考文献
    相似文献
    引证文献
引用本文

胡钟元,王开旭,周馨,高林辉,李跃. Bi2Sn2O7含量对改性Ag/SnO2电接触复合材料性能的影响研究[J].稀有金属材料与工程,2022,51(10):3808~3818.[Hu Zhongyuan, Wang Kaixu, Zhou Xin, Gao Linhui, Li Yue. Effect of Bi2Sn2O7 content on microstructure and properties of Modified Ag/SnO2 Electrical Contact materials[J]. Rare Metal Materials and Engineering,2022,51(10):3808~3818.]
DOI:10.12442/j. issn.1002-185X.20210837

复制
文章指标
  • 点击次数:
  • 下载次数:
  • HTML阅读次数:
  • 引用次数:
历史
  • 收稿日期:2021-09-21
  • 最后修改日期:2021-11-16
  • 录用日期:2022-01-22
  • 在线发布日期: 2022-11-01
  • 出版日期: 2022-10-28