High-purity indium finds extensive application in the aerospace, electronics, medical, energy, and national defense sectors. Its purity and impurity content significantly influence these applications. In this study, ultrahigh-purity indium was prepared by combining zone refining with vacuum distillation. The average removal efficiency of impurity Sb can approach 95%, while the removal efficiency of impurities Sn and Bi could reach over 95% and the removal efficiency of Si, Fe, Ni, and Pb could reach over 85%. Ultimately, the amount of Sn and Sb impurities was reduced to 2.0 ppb and 4.1 ppb, respectively, and the majority of impurities, including Fe, Ni, Pb, and Bi, were reduced to levels below the instrumental detection limit. The overall impurity removal efficiency was 90.9%, and the indium purity was 7N9.