+高级检索
低压化学气相沉积制备ZrC涂层:原位溴化工艺
DOI:
作者:
作者单位:

中航工业复合材料技术中心 先进复合材料国防科技重点实验室,,

作者简介:

通讯作者:

中图分类号:

基金项目:

国家自然科学基金项目(Grant No. 91216302),国家重点基础研究发展计划(Grant No. 2015CB655200)


Fabrication of uniform ZrC coating by low pressure chemical vapor deposition: The in-situ bromination method
Author:
Affiliation:

National key laboratory of advanced composites, AVIC Composite Technology Center,,

Fund Project:

  • 摘要
  • |
  • 图/表
  • |
  • 访问统计
  • |
  • 参考文献
  • |
  • 相似文献
  • |
  • 引证文献
  • |
  • 资源附件
  • |
  • 文章评论
    摘要:

    本研究设计了一种溴化装置,用于合成并稳定控制ZrBr4蒸汽的流量。采用低压化学沉积技术,以Zr-Br2-C3H6-H2-Ar为体系,1200°C在石墨基底上制备了ZrC涂层。研究了气体组分(源气C/Zr比)对ZrC涂层微观形貌及生长机制的影响。源气C/Zr比为1.5时,涂层的沉积过程为由表面反应机制为主,ZrC涂层较为疏松。源气C/Zr比为0.5~1时,扩散动力学是涂层的主要生长机制,所制备的ZrC涂层具有致密均匀ZrC涂层,并沿(200)晶面择优取向。同时,源气C/Zr比为0.5时,制备的ZrC涂层无自由碳存在并具有近化学计量比。

    Abstract:

    A bromination apparatus was designed and manufactured to accurately control the flow rate of ZrBr4 vapor. Zirconium carbide (ZrC) coatings were deposited on graphite substrate at 1200°C by low pressure chemical vapor deposition from the Zr-Br2-C3H6-H2-Ar system. The effects of gas composition (input C/Zr ratio) on the morphology and growth mechanism of ZrC coatings were investigated. The coating deposition process was controlled by the surface reaction kinetics at the input C/Zr ratio of 1.5, leading to a loose structure. When the input C/Zr ratios were 0.5 and 1, coating growth was dominated by diffusion kinetics, resulting in (200) preferential orientation with a dense columnar structure. Meanwhile, ZrC coating without free carbon was produced at the input C/Zr ratio of 0.5.

    参考文献
    相似文献
    引证文献
引用本文

马新,胡海峰,邱海鹏.低压化学气相沉积制备ZrC涂层:原位溴化工艺[J].稀有金属材料与工程,2018,47(S2):58~61.[Xin Ma, Haifeng Hu, Haipeng Qiu. Fabrication of uniform ZrC coating by low pressure chemical vapor deposition: The in-situ bromination method[J]. Rare Metal Materials and Engineering,2018,47(S2):58~61.]
DOI:[doi]

复制
文章指标
  • 点击次数:
  • 下载次数:
  • HTML阅读次数:
  • 引用次数:
历史
  • 收稿日期:2017-12-11
  • 最后修改日期:2017-12-11
  • 录用日期:2018-02-01
  • 在线发布日期: 2018-11-01
  • 出版日期: