Abstract
The influence of stress on the recrystallization process of pure titanium was investigated. Bending stress was applied during the annealing process of a pure titanium plate to observe the recrystallization process under tensile and compressive stresses on one section. Industrial pure titanium TA1 rolled plates with different deformation levels of 20%, 40%, and 60% were prepared. These samples were then subjected to a temperature of 600 °C and a stress of 30 MPa for 10 min. It is found that in the samples with 20% and 40% deformation levels, only a few recrystallized grains are observed. Additionally, the average grain size in the region under stress becomes larger than that in the region without stress. To further investigate the grain growth, the rolled sheet with 40% deformation level was kept at 600 °C and 30 MPa for 60 and 120 min. It is observed that the abnormal growth of grains in the tensile stress area continues until the critical size is reached, after which they stop growing. The increased grain growth during recrystallization can be attributed to the stress-promoting dislocation adjustment. The grains with favorable conditions tend to grow abnormally along the direction of the applied stress. However, the high density of residual dislocations within the titanium plate results in a reduction in the driving force for grain growth, leading to the existence of critical size. These findings provide an explanation for different recrystallization behavior observed in titanium under tensile and compressive stresses.
Industrial pure titanium has a wide range of applications in aerospace, shipping, nuclear energy and other high-tech field
In recent years, there is an increased interest in recry-stallization and thermomechanical processing. Li et a
The aim of this study is to investigate the effect of applied stress on the static recrystallization process of industrial pure titanium TA1, which is of great significance for the precise control of the microstructure of titanium alloys. A pure bending experimental design was used to simultaneously observe the effect of compressive and tensile stresses on the recrystallization process in one cross section. EBSD was used to characterize the original microstructure and the recry- stallized microstructure, and the experimental results were verified by calculating the geometrically necessary dislocation (GND) density using AZtec data analysis software.
In this experiment, three pure titanium plates with different deformation amounts were prepared to explore the influence of stress on the recrystallization process. The blanks selected were TA1 commercial pure titanium sheets with original di-mension of 100 mm×75 mm×4 mm, which were cut into three plates of 100 mm×25 mm×4 mm by wire-electrode cutting. The plates were then hot-rolled to thicknesses of 3.2, 2.4 and 1.6 mm with deformation levels of 20%, 40% and 60%, recorded as H20, H40 and H60, respectively. Ten equally spaced positions in the length direction were taken to measure the thickness of the rolled plate, the average value was taken as the thickness value and the shortest side length was taken as the length value. The dimensional data of the final three plates are shown in
Plate | Thickness/mm | Variance | Deformation/% | Width/mm | Length/mm |
---|---|---|---|---|---|
H20 | 3.352 | 0.000 107 | 16.2 | 24.5 | 116.1 |
H40 | 2.593 | 0.000 268 | 35.17 | 25 | 148 |
H60 | 1.714 | 0.001 227 | 57.15 | 25 | 215 |
(1) |

Fig.1 Experimental design diagram
where a is the spacing marked in
A small section was cut in the middle of the strip as a specimen for lateral cross-sectional observation by EBSD. To prepare the sample for EBSD observation, it was metallographically polished and then electrolytically polished. The composition of the electrolytic polishing fluid was 6% perchloric acid+34% n-butanol+60% methanol. A TESCAN S800 GMH field emission swept electron microscope was used to obtain the EBSD orientation map.

Fig.2 EBSD maps for 20% (a), 40% (b) and 60% (c) deformation rolled plates; KAM map (d); polar plots for 20% deformation rolled plates (e)
The identification of recrystallized grains in the microstructure is based on the grain orientation spread (GOS) criterion, defined as the degree of deviation of the orientation for each pixel point within the grain from the average orientation of the grain. In different literatures, the cut off angle for GOS is chosen differently, but the common denominator is that grains with GOS less than 1° are regarded as recrystallized grain

Fig.3 GOS maps of H20, H40 and H60 samples annealed for 10 min in different regions (blue represents G1, yellow represents G2 and red represents G3)

Fig.4 GOS maps of H40 sample annealed for 10, 60 and 120 min
It can be seen from
The contents of G1, G2 and G3 in

Fig.5 Contents of G1, G2 and G3 in H20-10 (a), H40-10 (b) and H60-10 (c) samples
To quantify the growth of grains in different regions during the annealing process and to exclude the influence of recrystallized fine grains and abnormally grown grains, grains with sizes of 10‒100 µm were extracted from each sample, and then the average grain sizes of three regions were calculated, as shown in
Location | H20-10 | H40-10 | H60-10 | H20 original microstructure | H40 original microstructure | H60 original microstructure |
---|---|---|---|---|---|---|
Inside | 34.47 | 29.48 | 23.65 | 27.925 | 20.2697 | 13.47 |
Middle | 32.5 | 28.55 | 20.07 | |||
Outside | 39.33 | 30.82 | 23.067 |
In

Fig.6 Contents of G1, G2 and G3 in H40-10 (a), H40-60 (b) and H40-120 (c) samples
To reveal the grain growth mechanism and the abnormal growth phenomenon in the tensile stress region, the geometrically necessary dislocation (GND) density on the outer side of the H40 sample is calculated using AZtec software and plotted in

Fig.7 GND distribution of the outer region of the H40 samples with different annealing time: (a) 10 min, (b) 60 min, and (c) 120 min
1) The stress applied during the annealing process of pure titanium can cause the grains to grow before recrystallization while promoting the occurrence of recrystallization. The grain size in the stress region is larger than that in the imiddle region in all three samples, and the amount of recrystallization has the same trend.
2) Tensile stress can cause abnormal grain growth. Abnormally grown grains appear on the outside of sample with 40% deformation, and as the annealing time increases, the abnormally grown grains stop growing.
3) The reason for the abnormal grain growth induced by tensile stress is that the stress can improve the dislocation motility while promoting the dislocation structure adjustment and reducing the dislocation density, thus creating dislocation density differences on both sides of the grain boundary and driving the migration of the grain boundary. However, as the grain grows, the difficulty of dislocation movement increases, and the grain growth is slow and eventually stops.
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