During semiconductor manufacturing, the gold wire bonding is influenced by the native Al oxide film, and Au wire could not bond to Al bondpad.In this paper, SEM, EDS and AES are used to investigate the bondpads. It's found that the elements on the surface of Al bondpads after sawing are consistent with those of before sawing. So swilling techniques does not affect the wire bonding. The AES results show that there is 40% O element in Al bondpads even though at the depth of half of the Al bondpad height. Consequently, Al has already been oxidized by O. The Al oxide film which can prevent the bonding and the diffusion of O to Al causes the failure of wire bonding.