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白光LED用新型Eu或Gd共掺杂的Ce:YAG单晶荧光材料的光谱性能研究
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国家自然科学基金 (60708021);上海基础研究重点项目 (09JC1414900);上海光技术专项 (09DZ1142002, 10DZ1140400);温州科技计划项目 (G20090082);浙江省科技厅重大科技专项国际科技合作项目 (2008C14088)


Study on Spectra Characteristics of Newly-Developed Eu or Gd Co-doped Ce:YAG Phosphor for White-LED
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    摘要:

    开展了白光LED用新型YAG单晶荧光材料的制备和光谱性能研究,采用提拉法生长Eu,Ce:YAG及Gd,Ce:YAG晶体,并通过吸收光谱,激发、发射光谱及电光性能等对晶体材料的光谱特性进行表征。结果表明,Eu或Gd共掺杂的Ce:YAG单晶荧光材料均可以被波长460 nm左右的蓝光芯片有效激发,产生一个范围为480~650 nm的宽峰发射。Eu3+或Gd3+共掺杂会对Ce3+离子的发光产生影响:Eu3+离子的掺杂,会对Ce3+离子的发光产生淬灭效应;而Gd3+离子取代基质Y3+离子可以使Ce3+离子的发射峰发生红移

    Abstract:

    The growth and spectra characteristics of Eu,Ce and Gd,Ce co-doped YAG single crystals phosphor used for white LED were investigated. Eu,Ce:YAG and Gd,Ce:YAG single crystals were grown by Czochralski method, and their luminescence properties were studied in terms of absorption, emission and excitation spectra. Date analysis reveals that a broad emission band range from 480-650 nm can be produced with blue light excitation. Eu3+ or Gd3+ co-doped ions could affect the emission properties of Ce:YAG crystal: Eu3+ ions co-doping will have the Ce3+ ions luminous quenching effect. On the contrary, Gd3+ ions, which is substituted at the Y site, would shift the emission spectra of Ce:YAG crystal to the red spectra

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华 伟,向卫东,董永军,梁晓娟,杨 帆,金怀东,梁 续,吕春燕.白光LED用新型Eu或Gd共掺杂的Ce:YAG单晶荧光材料的光谱性能研究[J].稀有金属材料与工程,2012,41(8):1371~1375.[Hua Wei, Xiang Weidong, Dong Yongjun, Liang Xiaojuan, Yang Fan, Jin Huaidong, Liang Xu, Lü Chunyan. Study on Spectra Characteristics of Newly-Developed Eu or Gd Co-doped Ce:YAG Phosphor for White-LED[J]. Rare Metal Materials and Engineering,2012,41(8):1371~1375.]
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  • 收稿日期:2011-08-15
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