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双层Mo薄膜的制备工艺与性能
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国家自然科学基金(50588201,50872116,51271155);国际热核聚变实验堆(ITER)计划专项(2011GB112001);四川省科技计划项目(2011JY0031, 2011JY0130);中央高校基本科研业务费专项资金(SWJTU12CX016, SWJTU11ZT16, SWJTU11ZT31, SWJTU11BR185)


Sputtering Parameters and Properties of Mo Bilayer Thin Films
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    摘要:

    利用直流磁控溅射法在普通钠钙玻璃(SLG)衬底上沉积双层Mo薄膜,对不同条件下沉积的薄膜通过X射线衍射(XRD)仪、扫描电子显微镜(SEM)、四探针电阻仪等对其相结构、表面形貌以及电性能进行测试。结果表明:双层Mo薄膜呈体心立方结构;由于非晶玻璃基底的影响以及沉积时间较短,缓冲层结晶质量差,薄膜表面粗糙,有空洞、裂纹,电阻率大,随温度的升高电阻率减小,薄膜表现出半导体的特性。随着顶层薄膜(溅射工作气压0.1 Pa)沉积时间的增加,薄膜厚度增加,结晶性能变好,表面更加平整、致密,总体电阻率变小,导电性能提高,随温度的升高电阻率增大,薄膜表现出金属特性。与单层膜相比,双层膜具有更低的电阻率,且溅射时间短,厚度薄,能够降低成本,节省源材料,更符合CIGS电池背电极的需求

    Abstract:

    Molybdenum (Mo) bilayer thin films were deposited on soda-lime glass using DC magnetron sputtering process. The structure, morphology, and electrical properties of Mo films have been studied by XRD, SEM, four-probe tester, etc. The results show that all bilayer films exhibit a body-centered cubic structure. The buffer layer with rough surface and many defects is initially made on the substrate, whose R-T relationship reflects the characteristics of the semiconductor. The resistivity of the thin film decreases with the top layer’s deposition time increasing. In addition, the R-T relationship of these films shows a metal feature. Compared with the monolayer film, bilayer films have lower resistivity and shorter sputtering time, so it greatly satisfies the requirement of CIGS solar cell back electrode.

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张艳霞,闫 勇,李莎莎,黄 涛,刘 连,张 勇,赵 勇,余 洲.双层Mo薄膜的制备工艺与性能[J].稀有金属材料与工程,2013,42(10):2107~2111.[Zhang Yanxia, Yan Yong, Li Shasha, Huang Tao, Liu Lian, Zhang Yong, Zhao Yong, Yu Zhou. Sputtering Parameters and Properties of Mo Bilayer Thin Films[J]. Rare Metal Materials and Engineering,2013,42(10):2107~2111.]
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  • 收稿日期:2012-10-12
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