杨芳,王庆阳,熊晓梅,刘国庆,冯建情,闫果,李成山.C和SiC掺杂对分步反应法制备MgB2块体和线材微观结构的影响[J].稀有金属材料与工程,2016,45(1):75~78.[yangfang,Wang Qingyang,Xiong Xiaomei,Liu Guoqing,Feng Jianqing,Yan Guo,Li Chengshan.Effect of carbon and SiC doping on the microstructure of MgB2 bulk and wires synthesized by a two-step reaction method[J].Rare Metal Materials and Engineering,2016,45(1):75~78.]
C和SiC掺杂对分步反应法制备MgB2块体和线材微观结构的影响
投稿时间:2013-12-31  修订日期:2014-04-09
中文关键词:  MgB2  掺杂  相转化  烧结  两步反应
基金项目:国家重点基础研究发展计划(973计划);国家自然科学基金项目(面上项目,重点项目,重大项目)
中文摘要:
      通过两步反应法分别制备了C和SiC掺杂的MgB2块材和线材。首先,在手套箱中按一定比例均匀混合Mg粉,B粉和C或SiC粉,压块后在900 ℃密闭氩气条件下烧结2小时,得到C或SiC掺杂的MgB4块体;将一次烧结后的MgB4粉末磨碎过筛,和补充的Mg粉混合作为前驱粉末,MgB2块体在密闭氩气条件下750 ℃烧结2小时而MgB2线材在密闭氩气条件下750 ℃烧结2小时。我们同时采用传统的固态烧结法制备了C或SiC掺杂的MgB2块体以作对比。对烧结后的样品进行了微观结构和相组成等分析检测,分步反应法与以往的固态烧结法相比,不仅因降低了Mg元素的影响而提高样品组织致密性,更因其采用了分步混合粉末而大大地提高了元素掺杂的均匀性。和SiC掺杂相比C掺杂能更有效地进入MgB2晶粒和晶界。
Effect of carbon and SiC doping on the microstructure of MgB2 bulk and wires synthesized by a two-step reaction method
英文关键词:MgB2  Doping  Phase formation  Sintering  Two-step reaction
英文摘要:
      Carbon and SiC doped MgB2 bulk and wires were fabricated by a two-step reaction method. The MgB4 samples were sintered at 900 ℃ for 2 h in closed argon atmosphere, and then appropriate amount of Mg powder was added with the ground MgB4 powder to get MgB2 samples, which were sintered at 750 ℃ and 2 h for bulk samples or 680 ℃ and 2 h for wire samples in closed argon atmosphere. Carbon and SiC doped MgB2 samples were also prepared by solid state sintering for compared. The phase evolution and microstructure of MgB2 samples were characterized by means of X-ray diffraction (XRD) and scanning electron microscope (SEM). The SEM results indicate the porosity of MgB2 samples prepared by the two-step reaction method improves obviously. The carbon doping could effectively introduce the doping element into the MgB2 crystalline lattice and grain boundaries compared with SiC doping.
作者单位E-mail
杨芳 西北有色金属研究院 yangfang@c-nin.com 
王庆阳 西北有色金属研究院  
熊晓梅 西北有色金属研究院  
刘国庆 西北有色金属研究院  
冯建情 西北有色金属研究院  
闫果 西部超导材料科技股份有限公司  
李成山 西北有色金属研究院  
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