The AZO films were deposited on glass substrates by DC coupled RF magnetron sputtering at low temperature with a AZO ceramic target(2 wt % Al2O3) , and then AZO films were etched by the mass fraction of 0.5% HCl solution to obtain textured structures. Crystal phase structure, surface morphology, optical, electrical properties and the textured structure of AZO films mainly influenced by working pressure were characterized by XRD, SEM, spectrophotometer, hall effect test system and photoelectric haze instrument respectively. The results show that AZO thin films with excellent performance can be prepared by DC coupled RF magnetron sputtering at low temperatures. With the decrease of working pressure, the compactness of AZO films is increased, and their photoelectric performance improves, and textured structures with good light trapping effect can be obtained by post etching. Under working pressure of 0.5 Pa, the resistivity of AZO thin films prepared at low temperature is 3.55?0-4 Ω?cm, and the transmittance at visible light is 88.36%. After etching, their resistivity and transmittance at visible light are 4.19?0-4 Ω?cm and 89.59% respectively, and the haze reaches to 24.7%.