祁洪飞,戴松喦,刘大博,王锦鹏.MSM结构TiO2基紫外探测器的制备及光电特性研究[J].稀有金属材料与工程,2017,46(10):2781~2784.[Qi Hongfei,Dai Songyan,Liu Dabo,Wang Jinpeng.Preparation and Photoelectric Properties of Metal-Semiconductor-Metal TiO2 Ultraviolet detectors[J].Rare Metal Materials and Engineering,2017,46(10):2781~2784.]
MSM结构TiO2基紫外探测器的制备及光电特性研究
投稿时间:2015-08-21  修订日期:2016-08-02
中文关键词:  Ag电极  TiO2薄膜  薄膜厚度  光电特性
基金项目:中国航空工业集团公司创新基金 (JK65150307)
中文摘要:
      采用RF磁控溅射技术在石英衬底上生长了厚度可调的锐钛矿相TiO2薄膜,继而采用光刻技术在薄膜上生长了Ag叉指电极,获得了MSM结构TiO2基紫外探测器。I-V特性测试结果表明Ag与TiO2之间表现出优良的欧姆接触特性,所制备探测器为欧姆接触。此外,TiO2薄膜厚度对探测器的光电性能影响显著,当薄膜厚度达到197 nm时,光电性能达到最高。此时,光电流高出暗电流近2.5个数量级,紫外光区的响应度高出可见光区近2个数量级。所制备Ag/TiO2MSM紫外探测器表现出高灵敏度和可见盲特性。
Preparation and Photoelectric Properties of Metal-Semiconductor-Metal TiO2 Ultraviolet detectors
英文关键词:Ag electrodes  TiO2films  films thickness  photoelectronic property
英文摘要:
      Anatase TiO2 thin films were grown on quartz substrates by RF magnetron sputtering. Metal-semiconductor-metal (MSM) detectors with Ag IDT electrodes were then fabricated. The measurement of the I-V characteristics for the detectors shows good ohmic contact. It was found that the thickness of TiO2 layer had an obvious effect on the photoelectronic properties. When TiO2 film thickness is 197 nm, the photocurrent is nearly 2.5 orders of magnitude higher than the dark current and the photoresponse in ultraviolet region is nearly 2 orders of magnitude higher than in visible light region. The high sensitivity and visible blind properties of the obtained devices indicate their potential application as UV detectors with high efficiency and low cost.
作者单位E-mail
祁洪飞 北京航空材料研究院 钢与稀贵金属研究所 qhfei@sina.com 
戴松喦 北京航空材料研究院 钢与稀贵金属研究所  
刘大博 北京航空材料研究院 钢与稀贵金属研究所  
王锦鹏 北京航空材料研究院 钢与稀贵金属研究所  
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