金艳婷,梁淑华.多孔结构阻挡层对CuW/Al界面组织及性能的影响[J].稀有金属材料与工程,2017,46(10):2943~2949.[Jin Yanting,Liang Shuhua.Effect of porous structure barrier layer on microstructure and properties of CuW/Al interface[J].Rare Metal Materials and Engineering,2017,46(10):2943~2949.]
多孔结构阻挡层对CuW/Al界面组织及性能的影响
投稿时间:2015-07-15  修订日期:2016-04-22
中文关键词:  CuW/Al界面  Ni中间层  微观组织  金属间化合物
基金项目:国家自然科学基金资助(项目号51371139)
中文摘要:
      将CuW假合金表面部分Cu腐蚀掉,预留100-200μm厚度的W骨架,随后通过化学镀在W骨架上形成多孔结构Ni扩散层,最后在700℃下用固-液连接的方法制备出CuW/Al整体材料。比较了不同保温时间下界面扩散区域微观组织结构,分析了界面扩散溶解层金属间化合物析出序列。结果表明,CuW/Al界面间多孔结构Ni中间层可有效抑制柱状Al2Cu相的生成和柯肯达儿孔洞裂纹的产生,界面处生成物主要以Al2Cu和 Al5W化合物为主。添加多孔结构Ni中间层可提高CuW/Al界面结合性能和电导率。
Effect of porous structure barrier layer on microstructure and properties of CuW/Al interface
英文关键词:CuW/Al interface  Ni interlayer  Microstructure  Intermetallic compound
英文摘要:
      A layer of W skeleton with 100-200μm was obtained by corroding the Cu of CuW surface. Then, a porous structure diffusion barrier layer was formed by electroless Ni plating on W skeleton. Finally, the CuW/Al bimetals was prepared by using solid-liquid connection at 700℃. The microstructure of interfacial diffusion layer at different holding time was investigated, and the precipitation sequence of the intermetallic compounds was analyzed. The results show that the porous structure Ni interlayer between CuW/Al interface can effectively reduce the amount of Al2Cu compounds, and prevent the formation of Kirkendall voids. The CuW/Al interface mainly consists of Al2Cu and Al5W phases. By adding porous structure Ni interlayer, the interface bonding property and electrical conductivity of CuW/Al were improved.
作者单位E-mail
金艳婷 西安理工大学 陕西省电工材料与熔渗技术重点实验室 411022135@qq.com 
梁淑华 西安理工大学 陕西省电工材料与熔渗技术重点实验室 liangsh@xaut.edu.cn 
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