Being considered In2O3, Ga2O3, Mg as In, Ga and Mg sources, the InxGa1-xN and Mg doped InxGa1-xN thin films were deposited on Si substrate by magnetron sputtering. The In component in the film decreases with the doping of Mg, because Mg doped suppresses the formation of In-N bond and increases the chance of Ga into the film. The EDS analysis of Mg doped InxGa1-xN film as-prepared show that 1.4 % of Mg content was successfully doped into the InxGa1-xN film. The electrical performances of In0.84Ga0.16N and Mg doped In0.1Ga0.9N thin films reveal that the type conduction of InxGa1-xN thin films is transformed from n-type to p-type conduction, and the hole concentration and mobility of Mg doped In0.1Ga0.9N thin film are found to be 2.65×1018 cm?3 and 3.9 cm2/Vs, respectively.