王雪文,吴朝科,高海波,翟春雪,张志勇,贺琳.Mg掺杂InxGa1-xN薄膜的磁控溅射法制备和表征[J].稀有金属材料与工程,2019,48(4):1074~1078.[wangxuewen,wuzhaoke,gaohaibo,zhaichunxue,张志勇,helin.Preparation and characterization of Mg doped InxGa1-xN thin films by magnetron sputtering[J].Rare Metal Materials and Engineering,2019,48(4):1074~1078.]
Mg掺杂InxGa1-xN薄膜的磁控溅射法制备和表征
投稿时间:2017-11-09  修订日期:2017-12-29
中文关键词:  InxGa1-xN薄膜,磁控溅射法,Mg掺杂,电学性能
基金项目:国家自然科学基金项目(面上项目,重点项目,重大项目)
中文摘要:
      本文采用磁控溅射法用In2O3靶、Ga2O3靶、Mg靶在Si片上制备出InxGa1-xN薄膜和Mg掺杂的InxGa1-xN薄膜。薄膜中的In组分随着Mg的掺杂而减少,因为Mg的掺杂抑制了In-N键的形成,并增加了Ga进入薄膜的机会。通过EDS对Mg掺杂的InxGa1-xN薄膜的分析表明,有1.4%的Mg组分被成功地注入进InxGa1-xN薄膜。电学性能分析表明 In0.84Ga0.16N 和Mg掺杂的 In0.1Ga0.9N薄膜导电类型由n型转变为p型,而且Mg掺杂的 In0.1Ga0.9N薄膜的空穴浓度和电子迁移率分别为 2.65×1018 cm?3 和3.9 cm2/Vs。
Preparation and characterization of Mg doped InxGa1-xN thin films by magnetron sputtering
英文关键词:InxGa1-xN thin film  magnetron sputtering  Mg doping  electrical properties  
英文摘要:
      Being considered In2O3, Ga2O3, Mg as In, Ga and Mg sources, the InxGa1-xN and Mg doped InxGa1-xN thin films were deposited on Si substrate by magnetron sputtering. The In component in the film decreases with the doping of Mg, because Mg doped suppresses the formation of In-N bond and increases the chance of Ga into the film. The EDS analysis of Mg doped InxGa1-xN film as-prepared show that 1.4 % of Mg content was successfully doped into the InxGa1-xN film. The electrical performances of In0.84Ga0.16N and Mg doped In0.1Ga0.9N thin films reveal that the type conduction of InxGa1-xN thin films is transformed from n-type to p-type conduction, and the hole concentration and mobility of Mg doped In0.1Ga0.9N thin film are found to be 2.65×1018 cm?3 and 3.9 cm2/Vs, respectively.
作者单位E-mail
王雪文 西北大学信息科学与技术学院 634219122@qq.com 
吴朝科 西北大学信息科学与技术学院  
高海波 西北大学信息科学与技术学院  
翟春雪 西北大学信息科学与技术学院  
张志勇 西北大学信息科学与技术学院  
贺琳 西北大学信息科学与技术学院  
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