刘兴军,朱家华,何洲峰,张锦彬,杨水源,韩佳甲,卢勇,王翠萍.热压烧结制备CuFeCoCr复合材料的显微组织及热物理性能研究[J].稀有金属材料与工程,2020,49(2):422~428.[Xingjun Liu,Jiahua Zhu,Zhoufeng He,Jinbin Zhang,Shuiyuan Yang,Jiajia Han,Yong Lu,Cuiping Wang.Investigation of microstructure and thermophysical properties of hot-pressed CuFeCoCr composite[J].Rare Metal Materials and Engineering,2020,49(2):422~428.]
热压烧结制备CuFeCoCr复合材料的显微组织及热物理性能研究
投稿时间:2018-09-13  修订日期:2018-10-04
中文关键词:  CALPHAD方法  复合材料  液相分离  热膨胀系数  热导率
基金项目:国家自然科学基金项目(面上项目,项目号:51471138)
中文摘要:
      本研究利用相图计算的CALPHAD方法和超音雾化制粉技术,在CuFeCoCr体系中设计并制备了一系列微米级复合粉体。通过热压烧结方法在烧结温度为950 °C,烧结压力为45MPa的工艺条件下成功获得块体复合材料。实验研究了块体复合材料中Cu含量对显微组织,热导率,热膨胀系数以及显微硬度的影响。研究结果表明:CuFeCoCr块体复合材料均由fcc富铜相和fcc富铁钴铬相组成。该系列复合材料经600 °C时效处理8小时后,其热膨胀系数变化范围为5.75~11.45×10-6 K-1;热导率变化范围为42.2~107.4 W.m-1.K-1。其中Cu55(Fe0.37Cr0.09Co0.54)45复合材料表现出良好的综合性能,即其热膨胀系数和热导率分别为 6.88×10-6 K-1 和 91.09 W.m-1.K-1,这可以与电子封装中半导体材料的热膨胀系数相匹配。此外,本研究所制备的复合材料的显微维氏硬度均高于Cu/Invar复合材料。
Investigation of microstructure and thermophysical properties of hot-pressed CuFeCoCr composite
英文关键词:CALPHAD approach  Composites  Liquid phase separation  Thermal expansion coefficients  Thermal conductivity
英文摘要:
      In this paper, series micro-scale powders with composite microstructure in CuFeCoCr system were successfully designed and fabricated by using CALPHAD (Calculated of Phase Diagrams) approach and gas atomization method, respectively. The bulk CuFeCoCr composites were produced by hot pressing technique at 950℃ under a pressure of 45MPa. The effect of Cu content on the microstructure, coefficients of thermal expansion (CTE), thermal conductivity (TC) and micro-hardness (HV) were systematically studied. The results show that the CuFeCoCr composites present two separate fcc phases (Cu-rich and FeCrCo-rich phase) microstructure. After annealing at 500 °C for 8 h, the CTE of the composites ranged from 5.75 to 11.45×10-6 K-1 and TC varied from 42.2 to 107.4 W.m-1.K-1. Particularly, the Cu55(Fe0.37Cr0.09Co0.54)45 composite exhibits excellent comprehensive properties, i.e. CTE of 6.88×10-6 K-1 and TC of 91.09 W.m-1.K-1,which matches with the semiconductor in electronic packaging. In addition, all the prepared composites exhibit a higher HV than that of Cu/Invar composite.
作者单位E-mail
刘兴军 福建省材料基因工程重点实验室 lxj@xmu.edu.cn 
朱家华 福建省材料基因工程重点实验室  
何洲峰 福建省材料基因工程重点实验室  
张锦彬 福建省材料基因工程重点实验室  
杨水源 福建省材料基因工程重点实验室  
韩佳甲 福建省材料基因工程重点实验室  
卢勇 福建省材料基因工程重点实验室  
王翠萍 福建省材料基因工程重点实验室 wangcp@xmu.edu.cn 
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