冯军.PMMA表面高功率脉冲磁控溅射制备ITO涂层的研究[J].稀有金属材料与工程,2020,49(7):2229~2233.[fengjun.Preparation of ITO coating on the PMMA by high-power pulse magnetron sputtering[J].Rare Metal Materials and Engineering,2020,49(7):2229~2233.]
PMMA表面高功率脉冲磁控溅射制备ITO涂层的研究
投稿时间:2019-03-26  修订日期:2020-05-29
中文关键词:  ITO涂层  高功率脉冲磁控溅射  PMMA  脉冲偏压  氢氩流量比
基金项目:国家磁约束核聚变能发展研究专项(2018YFE0313100);南华大学博士启动基金(2016XQD29)
中文摘要:
      采用高功率脉冲磁控溅射技术在PMMA基体上制备了ITO涂层。利用XRD、SEM对涂层进行了相结构的分析,并进行了划痕实验、光电性能测试,结果表明:偏压、氢氩流量比等工艺参数对涂层的相结构、膜基结合力、光电性能均有影响。增大偏压,膜基结合力将增强,偏压达到240 V时,膜基结合力最好(56.5N)。偏压由0 V增加到160 V的过程中,涂层晶粒增大,透射率变高( 由82.24% 增至 89.82%),电阻率变低(由0.006571 减至 0.000543 Ω.cm)。氢氩流量比由0增至0.05,透射率变低(由89.82%减至56.12% )。氢氩流量比由0增至0.03,电阻率变低(由0.000543减至0.000212 Ω.cm ) ;氢氩流量比由0.03增至0.05,电阻率变高由0.000212 增至0.000373 Ω.cm)。
Preparation of ITO coating on the PMMA by high-power pulse magnetron sputtering
英文关键词:ITO coatings  high-power pulse magnetron sputtering  PMMA  pulsed bias  flowrate?ratio?of hydrogen?and?argon
英文摘要:
      In this study, the ITO coatings were deposited on PMMA by high-power?pulse?magnetron?sputtering (HPPMS). The effects of HPPMS on the coatings by different parameters were investigated, and the phase, bonding strength,transmittance and resistivity were characterized by XRD, scratch tester, spectrophotometer and holzer test platform respectively. The results show that phase, bonding?strength, transmittance and resistivity are affected by pulsed bias and flowrate ratio of hydrogen and argon. With increasing the pulsed bias, the bonding?strength becomes better, the best bonding?strength is 56.5N when pulsed bias is 240 V. with the pulsed bias increasing from 0 V to 160 V, the grain size gets bigger, the transmittance becomes better( increasing from 82.24% to 89.82% ) and the resistivity also becomes better (decreases from 0.006571 to 0.000543 Ω.cm). With the flowrate ratio of hydrogen and argon increasing from 0 to 0.05,the transmittance becomes worse (decreasing from 89.82% to 56.12% ).With the flowrate ratio of hydrogen and argon increasing from 0 to 0.03 ,the resistivity becomes better( decreasing from 0.000543 to 0.000212 Ω.cm ) .With the flowrate ratio of hydrogen and argon increasing from 0.03 to 0.05,the resistivity becomes worse(increasing from 0.000212 to 0.000373 Ω.cm) .
作者单位E-mail
冯军 南华大学 speedfjkang@163.com 
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