白雪,刘宇阳,王星奇,桂涛,杨磊,王星明,储茂友.硅掺杂碳复合靶材的制备研究及溅射膜层生长形式分析[J].稀有金属材料与工程,2020,49(12):4207~4214.[Bai Xue,Liu Yuyang,Wang Xingqi,Gui Tao,Yang Lei,Wang Xingming,Chu Maoyou.Study on preparation of silicon doped carbon composite target and the growth form of sputtering film layer[J].Rare Metal Materials and Engineering,2020,49(12):4207~4214.]
硅掺杂碳复合靶材的制备研究及溅射膜层生长形式分析
投稿时间:2020-05-03  修订日期:2020-06-08
中文关键词:  C/Si  靶材  β-SiC  热处理  热压  
基金项目:有研科技集团有限公司青年基金资助(项目号13161)
中文摘要:
      以石墨、碳化硅、硅粉体为原料,采用预处理工艺得到复合原料粉体,热压烧结制备C/Si 80/20 at%靶材。将制备的靶材在不同基片上溅射镀膜,分析薄膜的形貌及其生长模式。通过扫描电镜分析微观形貌、四探针测试电阻率、XRD结合拉曼光谱分析晶体结构,结果如下:(1)石墨和硅粉球磨混合48h可获得Si元素均匀分布的C/Si复合粉体;该粉体在1900 ℃下真空热处理时,C/Si通过互扩散生成等轴晶3C-SiC;(2)不同粒径的β-SiC粉体在1900 ℃真空热处理时,颈部生长速率和晶体结构转变存在显著差异。在高温下,纳米β-SiC粉体蒸汽压高,颈部增长速率快,通过蒸发-凝聚再结晶后可获得球形度良好的3C-SiC微米颗粒。(3)以C/Si/SiC 70/10/10 at%粉体为原料,采用球磨和高温真空热处理得到预处理粉体并热压制备C/Si 80/20 at%靶材,结果表明:与C/SiC 60/20 at%二元组分体系相比,三元组分预处理粉体制备靶材的均匀性好,平均电阻率3.9 mohm·cm,极差0.59,密度2.34 g/cm3,石墨化度0.17, 石墨晶体完整性好。(4)将制备的C/Si 80/20at%靶材分别在玻璃、硅片以及陶瓷基片上磁控溅射制备类金刚石薄膜,结果发现:在Si基体表面薄膜呈纵向生长模式,膜层微粒小于20 nm;在玻璃基体表面膜层呈层状生长模式且结合紧密;在陶瓷基体表面薄膜呈片状生长模式,膜层由微米级颗粒结合组成,与陶瓷基体的微观组织相似。
Study on preparation of silicon doped carbon composite target and the growth form of sputtering film layer
英文关键词:C/Si  target  β-SiC  heat treatment  hot-pressing
英文摘要:
      Using carbon, silicon carbide and silicon as raw material, the composite raw material powder was prepared by pretreatment process and C/Si 80/20at% target via hot pressing. The target material was then sputtered on different substrates. The micromorphology was analyzed by SEM; the resistivity was measured by four probes; the crystal structure was examined by XRD combined with Raman spectroscopy. The results yielded are: (1) Uniformly distributed C / Si powder of Si elements was obtained after consistent ball milling for 48 hours. While the powder is vacuum heat treated at 1900 ℃, liquid silicon and solid carbon generate equiaxed 3C-SiC through inter-diffusion. (2) Whenβ-SiC powders with different size were vacuum heat-treated at 1900 ℃, there was a significant disparity between neck growth rate and crystal structure transformation. Under high temperature, the nano-β-SiC powder had higher vapor pressure and its neck growth rate was relatively faster. Subsequently, pure 3C-SiC microparticles with higher sphericity were acquired after evaporation-coagulation and recrystallization. (3) Using C / Si / SiC 70/10/10 at% powder as raw materials and through ball milling /high-temperature vacuum heat treatment as pretreatment methods, C / Si 80/20 at% target was hot-pressed. The results show that: In comparison with the C / SiC 60/20 at% binary component system, the target prepared by the ternary component pretreatment powder has better uniformity, the average resistivity is 3.9×10-3 ohm · cm and the range is 0.59, the density is 2.34g / cm3, the degree of graphitization is 0.17, the graphite crystals have good integrity. (4) C / Si 80 / 20at% target was magnetron sputtered on glass, silicon wafer and ceramic substrate to deposit diamond-like thin films. The results exhibited that the film on the Si substrate had a longitudinal growth mode and the film particles were less than 20nm; The film layer on glass had a layered growth mode and were tightly bonded; The film on the ceramic substrate, composed of micron-sized particles that were similar to the microstructure of the ceramic matrix.
作者单位E-mail
白雪 有研资源环境技术研究院(北京)有限公司 baixue1986@163.com 
刘宇阳 有研资源环境技术研究院(北京)有限公司  
王星奇 有研资源环境技术研究院(北京)有限公司  
桂涛 有研资源环境技术研究院(北京)有限公司  
杨磊 有研资源环境技术研究院(北京)有限公司  
王星明 有研资源环境技术研究院(北京)有限公司  
储茂友 有研资源环境技术研究院(北京)有限公司  
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