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SiB4高温热氧化机理及动力学
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作者单位:

1.哈尔滨工业大学;2.有研工程技术研究院有限公司

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中图分类号:

V254.2

基金项目:

深圳市科技计划资助项目(项目编号:KQTD2016112814303055)


Thermal Oxidation Mechanism and Kinetic of SiB4 at Elevated Temperature
Author:
Affiliation:

Harbin Institute of technology

Fund Project:

The Shenzhen Science and Technology Program (grant no. KQTD2016112814303055)

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    摘要:

    本文以高超声速飞行器表面高发射率涂层关键填料SiB4为研究对象,采用非等温热重分析法在空气条件下对粒径40 μm SiB4粉体高温热氧化过程以及氧化动力学进行研究。结果表明,SiB4热氧化开始温度为650℃,热氧化过程质量呈现恒重→增重→恒重变化趋势,其中高温区试样恒重分别是由玻璃相包覆保护作用、氧化增重与气相挥发损失竞争作用两种机制控制。升温速率对SiB4热氧化过程影响显著,升温速率越快,放热效应越明显。SiB4的平均活化能为239.14 kJ/mol,动力学指前因子A=2.1901×104 K/s,热氧化动力学函数为G(α)=ln[-ln(1-α)]^1.7574。

    Abstract:

    Silicon tetraboride (SiB4) is one of the indispensable functional filler of current high-emissivity thermal protection coating, which protects hypersonic aircrafts with speed of Mach number 5 and above from extremely high temperature environment. With the increase of reusable launch vehicles’ (RLV) speed, nowadays the demand of coating service safety and reliability has also been put forward for higher requirements. It is very of significance to understand the oxidation model and kinetic of SiB4, hence, so that can make further improvements of coating properties. The oxidation kinetics of SiB4 powders with particle size of 40 μm in air flow at temperature up to 1300 ℃ was investigated using non-isothermal analysis at 5 ℃/min, 10 ℃/min and 20 ℃/min, and the Flynn-Wall-Ozawa (FWO) method also been utilized to calculate the activation energy Ea, the preexponential factor A and the oxidation kinetic model function. The results show that starting temperature of oxidation reaction of SiB4 powder was about 650 ℃, and TG curves had three distinguishable stages in the temperature ranges of < 650℃, 650-1000℃ and 1000-1300 ℃ accompanying a trend of mass constant → mass gaining → mass constant. There were two reasons, which were the protecting of SiO2-B2O3 glass and the competitive effect between volatilization of B2O3 and mass gaining for oxidation of SiB4, respectively, for the mass constant of SiB4 samples at high temperature stage. And there was an obviously connection between the heating rates and SiB4 oxidation that the faster temperature rises, the more obvious the exothermic effect. The activation energy of 40 μm silicon tetraboride was 239.14 kJ/mol and the preexponential factor was 2.1901×104 K/s. The conversion function of oxidation reaction of SiB4 was G(α)=ln[-ln(1-α)]^1.7574.

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孙宇雷,李明伟,张庆猛,杨志民,钟业盛,史丽萍,赫晓东. SiB4高温热氧化机理及动力学[J].稀有金属材料与工程,2022,51(7):2662~2666.[Sun Yulei, Li Mingwei, Zhang Qingmeng, Yang Zhimin, Zhong Yesheng, Shi Liping, He Xiaodong. Thermal Oxidation Mechanism and Kinetic of SiB4 at Elevated Temperature[J]. Rare Metal Materials and Engineering,2022,51(7):2662~2666.]
DOI:10.12442/j. issn.1002-185X.20210554

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  • 收稿日期:2021-06-29
  • 最后修改日期:2021-10-20
  • 录用日期:2021-10-27
  • 在线发布日期: 2022-07-29
  • 出版日期: 2022-07-27