王月月,胡美华,毕宁,韩鹏举,周绪彪,李尚升.B掺杂p型SiGe合金的制备与热电性能表征[J].稀有金属材料与工程,2022,51(8):2942~2946.[Yueyue Wang,Meihua Hu,Ning Bi,Pengju Han,Xubiao Zhou,Shangsheng Li.Preparation and thermoelectric properties of B-doped p-type SiGe alloys[J].Rare Metal Materials and Engineering,2022,51(8):2942~2946.]
B掺杂p型SiGe合金的制备与热电性能表征
投稿时间:2021-07-10  修订日期:2021-08-15
中文关键词:  热电材料  硅锗合金  放电等离子烧结  热导率
基金项目:国家自然科学基金资助(52072113)
中文摘要:
      SiGe合金作为一种重要的高温热电材料一直被广泛关注并得到商业应用,其n型SiGe合金热电材料的无量纲热电优值(ZT)取得较大进步,但是p型SiGe合金的ZT值仍然较低。本文,以一定化学计量比均匀混合的Si、Ge、B混合粉末为原材料,使用放电等离子烧结(SPS)系统一步法合金化制备了p型Si80Ge20Bx(x=0.5,1.0,2.0)合金热电材料,并对样品的组成、微观形貌、热电性能进行了表征与分析。结果表明,放电等离子烧结过程实现原位合金化并烧结为块体材料。随着B掺杂量的增加,电导率明显提升,热导率显著下降,当温度为950 K时,热导率为1.79 W /(m?K)。在1050 K时,ZT值达到了0.899。球磨和掺杂的协同作用使得SiGe结构基体中产生不同类型的缺陷特征而散射不同波长的声子,导致硅锗合金热导率的降低。
Preparation and thermoelectric properties of B-doped p-type SiGe alloys
英文关键词:thermoelectric materials  Silicon germanium alloy  Spark plasma sintering  Thermal conductivity
英文摘要:
      As an important high-temperature thermoelectric materials, SiGe alloy has been concerned and used widely. Although the dimensionless thermoelectric merit (ZT) of n-type SiGe alloys thermoelectric material has made much great progress, the ZT of p-type SiGe alloys is still low. In this paper, p-type Si80Ge20Bx (x = 0.5, 1.0, 2.0) alloys thermoelectric materials were prepared by one-step alloying method using Si, Ge and B powders as raw materials. The composition, microstructure and thermoelectric properties of the samples were characterized and analyzed. The results show that, in-situ one-step alloying followed by spark plasma sintering can be realized and bulk materials can be obtained. With the increase of B doping content, the electrical conductivity increases significantly and the thermal conductivity decreases significantly. When the temperature is 950 K, the thermal conductivity is 1.79 W/(m K). At 1050 K, ZT reaches the maximum value of 0.899. Due to the synergistic effect of ball milling and doping, different types of defects are produced in SiGe structure matrix resulted in scattering of different wavelengths of phonons, leading to the decrease of thermal conductivity of SiGe alloy.
作者单位E-mail
王月月 河南理工大学材料科学与工程学院 875204223@qq.com 
胡美华 河南理工大学材料科学与工程学院 humh@hpu.edu.cn 
毕宁 河南理工大学化学化工学院 bining@hpu.edu.cn 
韩鹏举 河南理工大学材料科学与工程学院 824132143@qq.com 
周绪彪 河南理工大学材料科学与工程学院 124423641@qq.com 
李尚升 河南理工大学材料科学与工程学院 lishsh@hpu.edu.cn 
摘要点击次数: 63
全文下载次数: 51
查看全文   查看/发表评论    HTML
关闭