Heavy fermion systems can exhibit abundant attractive quantum ground states by tuning external parameters such as dimension. High-quality USb₂ thin films were prepared on graphene/6H-SiC(0001) surface by molecule beam epitaxy. Combining the reflection high energy electron diffraction, X-ray diffraction, electric transport and X-ray photoelectron spectroscopy measurements, it is demonstrated that the grown USb₂ films are high-quality single crystals. Furthermore, the surface topography, atomic structure and band structures of USb₂ films were characterized by scanning tunneling microscopy (STM) and angle-resolved photoelectron spectroscopy (ARPS). Results show that the surface atomic structure, electric transport property and band structure of the grown USb₂ films are similar to those of bulk USb₂ single crystals. The preparation and characterization of high-quality USb₂ films provide precious experimental experiences for exploring fantastic properties of low-dimensional uranium-based heavy fermion systems by growing ultrathin films with desirable thickness in the future.