赵晓慧,姚蕾,李天君,张梦霏,潘 伟.等离子放电烧结制备10ScSZ细晶块体及其烧结温度探究[J].稀有金属材料与工程,2020,49(2):500~504.[Zhao Xiaohui,Yao Lei,Li Tianjun,Zhang Mengfei,Pan Wei.Preparation of fine-grained 10ScSZ bulks by Spark Plasma Sintering and Investigation of Sintering Temperature[J].Rare Metal Materials and Engineering,2020,49(2):500~504.]
等离子放电烧结制备10ScSZ细晶块体及其烧结温度探究
投稿时间:2019-04-21  修订日期:2019-05-08
中文关键词:  10ScSZ  烧结曲线  放电等离子烧结  电导率
基金项目:国家自然科学基金(51323001)
中文摘要:
      采用燃烧法制备10ScSZ粉体,利用等离子放电烧结(SPS)制备10ScSZ细晶致密陶瓷块体。根据SPS上下电极间距随烧结温度变化制作烧结曲线,在1200 ℃附近电极间距最小,判断陶瓷致密化温度在1200 ℃左右。为验证该方法的可靠性,选取1050 ℃,1100 ℃,1150 ℃,1200 ℃,1250 ℃作为烧结温度分别制备样品。结果表明在1150 ℃烧结的10ScSZ样品具有最高的致密度,达到99.4%,且具有平均晶粒尺寸为194 nm的细晶结构,与推测结果基本相符。该实验结果证实了在SPS烧结中通过烧结曲线判断合适的烧结温度是一种高效可行的方法。
Preparation of fine-grained 10ScSZ bulks by Spark Plasma Sintering and Investigation of Sintering Temperature
英文关键词:10ScSZ  densification  SPS  conductivity
英文摘要:
      Fine-grained compact 10 mol% scandia stabilized zirconia (10ScSZ) bulks were sintered by SPS using powders synthesized by the combustion method as raw materials. The densification process of as-processed powders was investigated by measuring the real-time ram displacement of SPS during heating. It was estimated that the densification temperature of this material was around 1200 ℃ at which the ram displacement is minimum. In order to verify the effectiveness of the approach, 1050 ℃, 1100 ℃, 1150 ℃, 1200 ℃, 1250 ℃ were chosen as the sintered temperature to prepared bulk samples respectively. The results revealed that the 10ScSZ sample sintered at 1150 °C had the highest density, reaching 99.4%, and a fine grain structure with an average grain size of 194 nm, which was basically consistent with the speculated results. In this study, an efficient and reliable method was proposed and confirmed for judging the proper SPS sintering temperature through the densification development.
作者单位E-mail
赵晓慧 清华大学 新型陶瓷与精细工艺国家重点实验室 752916341@qq.com 
姚蕾 清华大学 新型陶瓷与精细工艺国家重点实验室  
李天君 清华大学 新型陶瓷与精细工艺国家重点实验室  
张梦霏 清华大学 新型陶瓷与精细工艺国家重点实验室  
潘 伟 清华大学 新型陶瓷与精细工艺国家重点实验室  
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