崔真,李恩玲.氮化镓纳米铅笔与纳米塔制备及优异场发射性能研究[J].稀有金属材料与工程,2018,47(1):43~46.[Zhen Cui,Enling Li.Growth and excellent field emission properties of GaN nanopencils and nanotowers[J].Rare Metal Materials and Engineering,2018,47(1):43~46.]
氮化镓纳米铅笔与纳米塔制备及优异场发射性能研究
投稿时间:2016-12-05  修订日期:2016-12-05
中文关键词:  氮化镓  纳米复合材料  场发射  功能应用
基金项目:
中文摘要:
      本文通过化学气相沉积法,用氧化镓和氨气反应成功制备出氮化镓纳米铅笔和纳米塔。通过扫描电镜表征发现氮化镓纳米铅笔分为两个部分:底部是一个大直径的纳米线,顶部是一个小直径的纳米线;氮化镓纳米塔为层状结构。氮化镓纳米铅笔和纳米塔的形成机理是气-液-固机制。场发射性能测试显示氮化镓纳米铅笔的开启电场为2.6 V /μm,纳米塔的开启电场为4.1 V /μm,这使得它们可以用于场发射平板显示及显示装置的冷阴极电子源,它们还可以使用于设计复杂纳米电子器件。
Growth and excellent field emission properties of GaN nanopencils and nanotowers
英文关键词:GaN  nanocomposite  field emission properties  functional applications
英文摘要:
      Gallium nitride (GaN) nanopencils and nanotowers have been synthesized by chemical vapor deposition (CVD) method using the reaction of Ga2O3 and ammonia. The observed morphology of GaN nanopencils is divided into two parts: the bottom is a nanowire with large diameter; the top is a nanowire with small diameter. The observed morphology of GaN nanotowers is a layer structure. The formation mechanism of GaN nanopencils and nanotowers is a vapor-liquid-solid (VLS) mechanism. The turn on field of 2.6 V/μm is obtained for GaN nanopencils and the turn on field of 4.1 V/μm is obtained for GaN nanotowers, which are sufficient for ?eld emission ?at panel displays and cold electron sources in display devices. This growth of GaN nanopencils and nanotowers will facilitate flexible design of device architectures for nanoelectronics.
作者单位E-mail
崔真 西安理工大学自动化与信息工程学院 zcui@xaut.edu.cn 
李恩玲 Science School,Xi’an University of Technology,Xi’an  
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