王雪文,李婷婷,苏星星,吴朝科,翟春雪,胡峰,张志勇,赵武.采用磁控溅射法在Si(100)生长InN薄膜及其禁带宽度与拉曼的测试[J].稀有金属材料与工程,2018,47(1):69~74.[Xuewen Wang,Tingting Li,Xingxing Su,Zhaoke Wu,Chunxue Zhai,Feng Hu,Zhiyong Zhang,Wu Zhao.Band Gap and Raman shift of InN grown on Si (100) by radio-frequency sputtering[J].Rare Metal Materials and Engineering,2018,47(1):69~74.]
采用磁控溅射法在Si(100)生长InN薄膜及其禁带宽度与拉曼的测试
投稿时间:2016-12-06  修订日期:2016-12-07
中文关键词:  薄膜  光学材料  晶体生长  光学性质  X射线衍射  禁带宽度  
基金项目:国家自然科学基金项目(面上项目,重点项目,重大项目)
中文摘要:
      本文采用磁控溅射法在Si(100)衬底上生长出高取向性和多种微观形貌的InN薄膜,其中铟作为铟靶,氮气作为氮源。x射线衍射(XRD)法和x射线光电子能谱(XPS)表明所有衍射峰和标准的纤锌矿晶型的InN一致,并且在 (101), (100)和(002)方向具有极高的取向度。扫描电子显微镜(SEM)和能带衍射谱表明,可以生长出高质量的不同微观结构的InN晶体薄膜,尤其是溅射功率为60W,溅射压强为0.4Pa时表现为标准的正六边形结构。在室温下并且激发波长为λ= 633的拉曼测试表明,可以通过E2(High)峰计算出InN薄膜的应力,由于微观结构的不同导致应力值也不同,A1(LO)峰值比较低是由于迁移率较高导致。紫外吸收测试可以计算出的能带宽度分别为1.07 eV,1.13 eV,1.32 eV。XRD、SEM、XPS、霍尔效应,紫外吸收和拉曼光谱证明生长出的不同微观结构的薄膜可以适应各种需求的传感器和其他设备。
Band Gap and Raman shift of InN grown on Si (100) by radio-frequency sputtering
英文关键词:thin films  optical materials  crystal growth  optical properties  X-ray diffraction  Energy
英文摘要:
      In this paper, we have grown the InN films with high orientation and varieties typical micrographs on Si (100) substrate by radio-frequency (RF) sputtering, while Indium was used as Indium target, and Nitrogen was used as Nitrogen source. The X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) show that all the diffraction peaks are identified to be associated with the wurtzite phase of InN, with high orientation of (101), (100) and (002). The Scanning Electron Microscope (SEM) and Energy Diffraction Spectrum (EDS) reveal that the high-quality crystal films of InN with various typical microstructures could be deposited, especially the standard of the hexagon at 60 W and 0.4 Pa. We also calculate the stress of InN films in E2 (High) by Raman spectra with an excitative wave length λ= 633 nm at room temperature, the values of the stress are different due to various microstructures. The A1 (LO) peaks are lower due to the high mobility. The calculated energies are 1.07 eV, 1.13 eV and 1.32 eV. The XRD, SEM, XPS, Raman spectra, Hall and UV absorption characterizations reveal that we could grow different microstructures of thin films to adapt the various requirements of sensors and other devices.
作者单位E-mail
王雪文 西北大学信息科学与技术学院 wangxuew@nwu.edu.cn 
李婷婷 西北大学信息科学与技术学院  
苏星星 西北大学信息科学与技术学院  
吴朝科 西北大学信息科学与技术学院  
翟春雪 西北大学信息科学与技术学院  
胡峰 西北大学信息科学与技术学院  
张志勇 西北大学信息科学与技术学院  
赵武 西北大学信息科学与技术学院  
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