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弧电流对电弧离子镀沉积超硬ta-C薄膜的影响
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大连理工大学 三束材料改性教育部重点实验室

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中图分类号:

TG146.2+3

基金项目:

国家重点研发计划课题(2016YFB0101318);国家自然科学基金(51972039);辽宁振兴人才计划(XLYC1902122)


Influence of Arc Current on Structure and Properties of the Super-hard ta-C film Deposited by Arc Ion Plating
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Key Laboratory for Material Modification by Laser, Ion and Electron Beams, Ministry of Education

Fund Project:

National Key R&D Program of China (2016YFB0101318); National Natural Science Foundation of China (51972039); Liaoning Revitalization Talent Program (XLYC1902122)

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    摘要:

    用电弧离子镀设备,以获得超硬四面体非晶ta-C薄膜为目的,通过改变弧电流,在硬质合金基体上沉积制备了5组类金刚石DLC薄膜,主要考察弧电流对薄膜结构、性能以及获得超硬ta-C薄膜的影响规律。采用SEM、Raman、XPS、纳米压痕以及摩擦磨损仪分别表征了薄膜的形貌、结构、力学性能以及摩擦性能。结果表明:当弧电流为30 A时,薄膜表面最为平整致密、大颗粒数量最少,Raman谱的ID/IG值最小为0.87、sp3键含量最大为64%,薄膜的硬度和弹性模量最大分别为56.7 GPa和721.1 GPa、弹性恢复系数高达58.9%,且薄膜的摩擦系数最小为0.073,表明此时获得了具有优异综合性能的超硬ta-C薄膜;但随着弧电流的增加,薄膜表面变得疏松多孔、表面大颗粒增多,ID/IG增大、sp3键含量减小,薄膜的硬度H和弹性模量E逐渐减小,薄膜的摩擦系数也逐渐增大、摩擦性能大大降低,此时薄膜又归于呈现普通的性能一般的DLC薄膜特征。分析表明,若用电弧离子镀技术制备性能优异的超硬四面体非晶ta-C薄膜,需控制薄膜在较小的离子通量下沉积生长,为此需选择较小的弧电流方能实现。

    Abstract:

    Five groups of diamond-like carbon (DLC) films with different arc currents were deposited on cemented carbide substrates by arc ion plating (AIP), aimed at the preparation of the super-hard ta-C film. The in?uences of arc current on the phase structure, microstructure, carbon atoms bond, mechanical properties and friction behavior of DLC ?lms were studied from various measurement tools, such as scanning electron microscope, Raman spectroscopy, X-ray photoelectron spectrometry, nanoindenter and ball-on-disk tribometer, respectively. The re-sults indicated that when the arc current is the lowest at 30 A, the surface of DLC film is the most smooth and compact, and the number of large particles in the least. The minimal ratio ID/IG and the maximum sp3 bond content are 0.87 and 64% at the arc current of 30 A, respectively. The ta-C film exhibits excellent performance including the highest hardness and modulus of 56.7 GPa and 721.1 GPa, the highest elastic recovery coefficient of 58.9% and the lowest friction coefficient is 0.073 while arc current is 30 A. However, the surface of the film becomes loose and porous, and the number of large particles on the surface increase with the increase of arc current. The ratio ID/IG increases and sp3 bond content decreases with increasing arc current. The hardness and modulus of DLC films decrease gradually, the ratio H/E changes little and H3/E2 decreases, and the friction co-efficient increases with increasing arc current. In summary, the results show that when the arc current is smaller, the ta-C film with super hard tetrahedral amorphous can be prepared by arc ion plating, and has excellent com-prehensive properties.

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引用本文

王明磊,林国强,程玮杰.弧电流对电弧离子镀沉积超硬ta-C薄膜的影响[J].稀有金属材料与工程,2022,51(8):3095~3102.[Wang Minglei, Lin Guoqiang, Cheng Weijie. Influence of Arc Current on Structure and Properties of the Super-hard ta-C film Deposited by Arc Ion Plating[J]. Rare Metal Materials and Engineering,2022,51(8):3095~3102.]
DOI:10.12442/j. issn.1002-185X.20210686

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  • 收稿日期:2021-08-02
  • 最后修改日期:2021-10-09
  • 录用日期:2021-10-27
  • 在线发布日期: 2022-09-05
  • 出版日期: 2022-08-29