The effect of YSZ doping level on transport properties and magnetoresistance in La2/3Ca1/3MnO3 has been experimentally studied. The samples are prepared by a standard sol-gel method. Through the measurement of the electronic properties of samples we can draw a conclusion that for x < 2%, the dopant cause the metal-insulator transition shift to low temperature and increase the resistance of samples. Then with the increase of doping level further, the resistance decreases and the metal-insulator transition temperature increase. Meanwhile , the YSZ dopant can increase the LFMR, it's maximum at 1%.