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Deposition of Ti-Si-N Thin Films at the Bottom of Deep Hole by Pulsed-D.C. PCVD
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TG174.44

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    Abstract:

    Ti-Si-N thin films prepared by pulsed-d.c. PCVD on the surface of HSS substrates, which were bolted with one end of deep holes to simulate the condition of complex-shaped inter-surface of various moulds and dies, were investigated. The micrographs show that the surface morphologies of the films become smoother with the increase of the depths of the holes. The thickness and hardness of the films decrease with the increase of the depth of the hole, which may result from the change of the composition of the films, while the adhesion between the films and substrates show an increase.

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[Ma Qingsong, Ma Shengli, Xu Kewei. Deposition of Ti-Si-N Thin Films at the Bottom of Deep Hole by Pulsed-D. C. PCVD[J]. Rare Metal Materials and Engineering,2005,34(5):738~741.]
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  • Received:
  • Revised:October 13,2003
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