Characteristics of GaN Film Prepared by Ammoniating Ga2O3/Al2O3 Deposited on Si(111) Substrate
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[Wei Qinqin, Xue Chengshan, Sun Zhencui, Zhuang Huizhao, Wang Shuyun. Characteristics of GaN Film Prepared by Ammoniating Ga2O3/Al2O3 Deposited on Si(111) Substrate[J]. Rare Metal Materials and Engineering,2005,34(5):746~749.] DOI：[doi]