An increasing interest in PZT ferroelectric memories is presented for their commercial applications in recent years, but fatigue behavior of PZT capacitors has been a critical problem in commercial applications for FRAM devices. Changing of electrode materials of PZT capacitors is an effective method to overcome the fatigue behavior of PZT capacitors. In this paper the structure, properties and characteristics of electrode materials for PZT thin films are introduced systematically. The effect of different electrode materials on structure and ferroelectric properties of PZT thin films are compared. The mechanism how to improve the ferroelectric properties of PZT capacitors via conducting metal oxide electrodes are discussed. The main problems and directions of development of electrodes are presented.