Ti based oxide anode with SnO2+SbOx was prepared by a thermal decomposition method. The SnO2+SbOx solid solution was characterized with TG/DTA, XRD and XPS. The growth activation energy of SnO2+SbOx solid solution was calculated and its activation mechanism was discussed. Meanwhile the expected lifetime of the oxide anode under high current density of 2 A/cm2 and in 0.5 mol/L H2SO4 solution was determined by a fast life method. The results show that the free electrons and oxygen vacancy produced by the N-type semiconductor and P-type semiconductor from Sb-doped SnO2 enhance the electrode conductivity and increase its expected lifetime to 30 h. The oxygen vacancy and too low intergranular rotary driving force are the main reasons for the decrease to 12.63 kJ/mol of the growth activation energy of SnO2+SbOx solid solution. Thus, SnO2+SbOx electrode solid solution is a fine electrode material with good conductivity and high stability.