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MOD Method Used for Conductive La0.4Sr0.6CoO3 Buffer Layers Deposition on LaAlO3 Single Crystal Substrates
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    Abstract:

    Conductive La0.4Sr0.6CoO3 (LaSrCoO) buffer layers with cubic-perovskite structure were prepared on LaAlO3(100) single crystal substrates by the metal organic deposition (MOD) process. The heat-treatment process was designed according to the differential thermal analysis and thermogravimetric analysis, in which the thermolysis temperature of the precursor layer is 620-800 oC and the crystallization temperature of the buffer layer is 825 oC. According to X-ray diffraction (XRD) analysis, the main phase is LaSrCoO with <100> preferred orientation after heat treatment; in addition, impurity phases are La2CO5 and LaCoO3. The LaSrCoO buffer layers have the strong biaxial texture by φ-scan and (100) polar figure. The resistivity of the buffer layers was measured by standard four-probe DC method from room-temperature to liquid-N2 temperature, and the result show that its resistivity is 1.04×10-4 Ω·m at 77 K, achieving the purpose of conductive buffer layer deposition.

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[Li Yingnan, Li Fenghua, Shen Yue, Fan Zhanguo, Li Chengshan, Lu Yafeng. MOD Method Used for Conductive La0.4Sr0.6CoO3 Buffer Layers Deposition on LaAlO3 Single Crystal Substrates[J]. Rare Metal Materials and Engineering,2011,40(4):685~688.]
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  • Received:April 27,2010
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