Copper indium gallium selenium (CIGS) films were prepared on quartz substrate within 40-600 °C by PLD method, and characterized by spectrophotometer, XRD, SEM and EDS. Results show that the films are grown with single chalcopyrite structure preferential (112) orientation, within 40-400 °C, the grains size, crystallization quality are almost not influenced with temperature, while the temperature reached 600 °C, grains size and crystal quality, the infrared light transmittance etc. increased significantly. These phenomena are mainly attributed to the effect of substrate temperature on the diffusion of the Ga elements, at high temperature, the diffusion is sufficient and the crystal structure reorganization is finished. The relationship between Se composition and temperature was also analyzed.