The phase component and surface structure of ITO sputtering target materials fabricated by hot pressing method were characterized by X-ray diffraction and X-ray photoelectron spectroscopy. The results indicate that the peaks of XRD pattern were shifted, which can be explained to the great difference of ion radius between the solute and the solvent. On the other hand, the peak shift of core level in X-ray photoelectron spectrum was due to the increasing occupancy of the ITO conduction band and the increase of Fermi level when Sn was doped. The research is beneficial to fabricate ITO sputtering target material with homogeneous composition and structure and high density