Zn0.95-xLixMn0.05O (x=0, 0.05) films were deposited on p-Si(110) by magnetron sputtering, and their structure, and electrical and magnetic properties were investigated. X-ray diffraction (XRD) results show that the films prefer the orientation along the c-axis and no second phase is found. The surfaces become smoother and denser with Li substitution.?The?Hall Effect measurement indicates the doping of Li in Mn-ZnO increases the concentration of the carrier without changing the n type conductivity. Li doping increases the magnetic property of the film at room temperature, which could be explained by a bound magnetic polaron model.