The HfO2 thin films with resistive switching behaviors were grown on indium tin oxide (ITO) /Glass substrates by radio-frequency (RF) magnetron sputtering method. The results of electrical tests indicate that HfO2 thin films show a bipolar resistive switching behavior. Using Ti as a buffer layer on the cathodal side of the memory cell, relatively reliable endurance (>2×102 cycles at 20 oC) and long data retention time (>104s at 20 oC) have been demonstrated, and the high-resistance to low-resistance ratio can reach 104. Based on the electrical property test results, the phenomena can be correlated with oxygen-vacancy-related traps. Space charge limited current (SCLC) mechanism is believed to be the reason for the resistive switching from the OFF state to the ON state