High-k hafnium oxide films were deposited by atomic layer deposition (ALD) on p-type Si (100) substrates. Tetrakis-diethylamino-hafnium (TDEAH) and water were used as hafnium precursor and the oxidant, respectively. Effects of deposition parameters, e.g., flow of precursors, pressure of the reactor, and temperature of the reactor and precursors on the growth of HfO2 films were investigated. By the adjustment of deposition parameters, two growth models of HfO2 films, chemical vapour deposition (CVD) liked growth model and ALD growth model were found. Results indicate that the growth model mainly depends on Q and M. There exists a transition from CVD-liked growth model to ALD growth model by the optimization of deposition parameters. The optimal deposition parameters with a GPC (growth per cycle) of 0.1 nm /cycle were obtained. Moreover, the results show that the crystallization of HfO2 film is under the control of temperature and thickness of the film.