In this paper, the photoelectrode of CdS QDs/CdTe NRAs are prepared by using chemical deposition for CdS and RF sputtering for CdTe. The achieved samples are investigated by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), uv-vis absorption spectroscopy (UV vis) and optical electrode electrochemical workstation, respectively. The SEM results confirm that the photoelectrode is consisted of CdS quantum dots and CdTe nanorods. The XRD results showed that CdTe nanorods grow along the preferred orientation of (111) direction. The novel pyroelectric phenomenon is found in the photoelectrode. The best results are achieved in the photoelectrode with 25 cycle CdS QDs, and the open circuit voltage and the short-circuit current is 0.49 V and 71.09 μA, respectively. The photoelectric ratio between the on and off is six. We also found the current reverse phenomenon caused by the pyroelectric property, and it has the important significance for improving photoelectric device performance.