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Home > Archive>Volume 50, Issue 5, 2021 >1513-1517. DOI:10.12442/j.issn.1002-185X.20200253
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Effect of Low-Dose Al Doping on Structure and Optical Properties of Sputtered SnO2 Thin Films on Slide Glass
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Affiliation:

1.Shaanxi Key Laboratory of Surface Engineering and Remanufacturing, Xi’an University, Xi’an 710065, China;2.Nano-film and Biological Materials Research Center, Xi’an Jiaotong University, Xi’an 710049, China

Fund Project:

Xi’an Science and Technology Project (2019KJWL05)

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    Abstract:

    A series of SnO2 thin films doped with low-dose Al (≤1mol%) were prepared on slide glass substrates by radio frequency (RF) magnetron sputtering. The crystal structure and optical properties were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-IR spectrometer, and photoluminescence (PL) measurements. Results show that the lattice constant c decreases with increasing the Al content, which implies that Al atoms are successfully introduced into the SnO2 and occupy the Sn sites, and large number of oxygen vacancies are generated. The average transmittance values are higher than 88% within the visible spectral region (400~800 nm) for all the films. The bandgap broadens when the Al percentage increases, which is dominated by the Burstein-Moss (BM) effect. The PL spectra of these films have near band edge and deep level emission under the radiation excitation of 265 nm wavelength. The observed intensity of these peaks increases consistently with increasing the Al percentage.

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[Li Yuanyuan, Zhang Ziyi, Guan Jiahao, Li Li, Li Shuli, Cheng Zhen, Yang Rui, Zhang Yunzhe, Zhao Xiaoxia, Xu Kewei. Effect of Low-Dose Al Doping on Structure and Optical Properties of Sputtered SnO2 Thin Films on Slide Glass[J]. Rare Metal Materials and Engineering,2021,50(5):1513~1517.]
DOI：10.12442/j. issn.1002-185X.20200253

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History
  • Received:April 16,2020
  • Revised:June 05,2020
  • Adopted:June 09,2020
  • Online: July 19,2021
  • Published: May 25,2021

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