High power pulsed magnetron sputtering technology can increase the ionization rate of the sputtering particles to enhance the mechanical properties of the film, but the loss of deposition rate has seriously affected the industrialization of this technology. The main purpose of this study is to achieve the functional goal of increasing the ionization rate of the sputtering particles and taking into account the high efficiency goal of the deposition rate. The gas discharge above the cathodic target surface is changed from glow to arc through the adjustment of the electric field parameters using a new type of dual-stage pulsed electric field. The high-density plasma generated by arc discharge enhances the impact kinetic energy of Ar+ and the accumulation of Joule heating on the target surface, and induces the target material to escape from target surface in a thermal emission mode with high ionization rate and high yield. The results showed that when the target current density of the Cu target and the Ti target increased, the volt-ampere characteristics between the cathodic target and the anodic vacuum chamber changed from a proportional to an inverse relationship, indicating that the gas discharge changed from glow to arc, and the escape-target mode of target materials could be transformed into a thermal emission mode. When the dual-stage pulsed electric field was used to induce arc discharge, the morphology of the Ti target surface changed from a polygonal pit structure with linear stripes to a large-area pit structure with linear stripes and ripple structure. It is indicated that the target material escaped from the target surface by sputtering and thermal emission, and the deposition rate of the Ti film had significantly increased from 6 nm/min to 26 nm/min.