Chalcogenide perovskites are an emerging class of functional semiconductor materials with unique electronic structures and optoelectronic properties. In this paper, chalcogenide perovskite BaZrS₃ nanostructures were prepared by a sol-gel method combined with chemical vapor reaction. And BaZr_1-xFe_xS₃ magnetic semiconductor was obtained by doping method. The structure, optical and magnetic properties were studied. The results show that the oxide perovskite BaZrO₃ can still exhibit a perovskite structure after vulcanization, that is, replacing O element with S element. And the sulfide treatment can reduce the band gap width of the sample. At the same time, 3d transition metal elements with localized magnetic moment, such as Fe, are used for cation doping of perovskite B site. The band gap width of the samples can also be systematically regulated by controlling the doping amount of Fe. In particular, the BaZr_99.7Fe_0.03S₃ and BaZr_99.5Fe_0.05S₃ exhibit room temperature ferromagnetism.