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Effect of annealing temperature on Photoluminescence of ZnO/Graphene nano-films deposited by sol-gel method
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School of information science and technology,Northwest University,,,

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    Abstract:

    ZnO/Graphene nano-films were directly prepared on Cu substrate via a low pressure chemical vapor deposition (LPCVD) and sol-gel method. The effects of the annealing temperature on the structural, morphology, the chemical state and component, and optical property of these ZnO/Graphene nano-films were investigated. The XRD patterns demonstrate that the ZnO/Graphene nanostructures exhibit the hexagonal wurtzite structure and the crystalline quality increases with increasing the annealing temperatures from 500 to 700 ℃. When the annealing temperature reaches at 700 ℃, SEM analysis shows that sample ?lm exhibits dense and uniform grains and smooth surface and the average grain size of film deposited 3 layers is about 35.7 nm. The PL measurement confirms that ZnO/Graphene nano-film deposited 3 layers at the annealing temperatures of 700℃ has an better optical performance, which due to the higher crystalline quality and lower defect concentration.

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[Jin Liu, Yuanyuan Lv, Zhiyong Zhang, Junfeng Yan. Effect of annealing temperature on Photoluminescence of ZnO/Graphene nano-films deposited by sol-gel method[J]. Rare Metal Materials and Engineering,2017,46(4):888~892.]
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History
  • Received:December 20,2016
  • Revised:December 20,2016
  • Adopted:March 01,2017
  • Online: August 04,2017
  • Published: