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祁洪飞,戴松喦,刘大博,王锦鹏.MSM结构TiO2基紫外探测器的制备及光电特性研究[J].稀有金属材料与工程(英文),2017,46(10):2781~2784.[Qi Hongfei,Dai Songyan,Liu Dabo and Wang Jinpeng.Preparation and Photoelectric Properties of Metal-Semiconductor-Metal TiO2 Ultraviolet detectors[J].Rare Metal Materials and Engineering,2017,46(10):2781~2784.]
Preparation and Photoelectric Properties of Metal-Semiconductor-Metal TiO2 Ultraviolet detectors
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Received:August 21, 2015  Revised:August 02, 2016
DOI:
Key words: Ag electrodes  TiO2films  films thickness  photoelectronic property
Foundation item:中国航空工业集团公司创新基金 (JK65150307)
Author NameAffiliation
Qi Hongfei,Dai Songyan,Liu Dabo and Wang Jinpeng  
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Abstract:
      Anatase TiO2 thin films were grown on quartz substrates by RF magnetron sputtering. Metal-semiconductor-metal (MSM) detectors with Ag IDT electrodes were then fabricated. The measurement of the I-V characteristics for the detectors shows good ohmic contact. It was found that the thickness of TiO2 layer had an obvious effect on the photoelectronic properties. When TiO2 film thickness is 197 nm, the photocurrent is nearly 2.5 orders of magnitude higher than the dark current and the photoresponse in ultraviolet region is nearly 2 orders of magnitude higher than in visible light region. The high sensitivity and visible blind properties of the obtained devices indicate their potential application as UV detectors with high efficiency and low cost.
$(".lightbox").lightbox ({fitToScreen:!0,imageClickClose:! 1,fileLoadingImage:"http://p0.qhimg.com/t014f18305c97360131.gif",fileBottomNavClose Image:"http://p0.qhimg.com/t0155d6ba22d11cc3ea.png",overlayOpacity:.7,navbarOnTop:! 0})